JPS5522866A - Separation method of semiconductor device - Google Patents

Separation method of semiconductor device

Info

Publication number
JPS5522866A
JPS5522866A JP9645478A JP9645478A JPS5522866A JP S5522866 A JPS5522866 A JP S5522866A JP 9645478 A JP9645478 A JP 9645478A JP 9645478 A JP9645478 A JP 9645478A JP S5522866 A JPS5522866 A JP S5522866A
Authority
JP
Japan
Prior art keywords
layer
single crystal
porous
sio
crystal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9645478A
Other languages
Japanese (ja)
Inventor
Hiroshi Morikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9645478A priority Critical patent/JPS5522866A/en
Publication of JPS5522866A publication Critical patent/JPS5522866A/en
Pending legal-status Critical Current

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  • Element Separation (AREA)

Abstract

PURPOSE: To separate an element without any step by epitaxially forming a single crystal layer and mulitcrystal layer simultaneously after forming a porous oxidized film on one conduction substrate of a low density selectively.
CONSTITUTION: After providing a B-diffusion for a P-Si substrate 1 by utilizing a Si3N4 mask, it is oxidized and turned to a porous Si4. Next, a liquid SiO2 dissolved in an alcohol is coated, to establish a wet oxidation, it is turned to a porous SiO2 5, and a SiO26 is formed on the surface. An opening is provided selectively to make an n+ diffusion layer 7. Next, when the film 6 is removed, and epitaxial growth is provided at a desirable impurity density and thickness, a single crystal layer is formed on only the upper portion of the n+ layer and, at the same time, a single crystal Si 9 is formed on the porous SiO2. If an element is formed on the single crystal layer 8, the element is separated with the multi-crystal layer 9 by pn junction to make the epi-layer surface flat and, therefore, an interelement wiring is not cut stepwise.
COPYRIGHT: (C)1980,JPO&Japio
JP9645478A 1978-08-07 1978-08-07 Separation method of semiconductor device Pending JPS5522866A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9645478A JPS5522866A (en) 1978-08-07 1978-08-07 Separation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9645478A JPS5522866A (en) 1978-08-07 1978-08-07 Separation method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5522866A true JPS5522866A (en) 1980-02-18

Family

ID=14165462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9645478A Pending JPS5522866A (en) 1978-08-07 1978-08-07 Separation method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5522866A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910154A (en) * 1988-12-23 1990-03-20 Ford Aerospace Corporation Manufacture of monolithic infrared focal plane arrays

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910154A (en) * 1988-12-23 1990-03-20 Ford Aerospace Corporation Manufacture of monolithic infrared focal plane arrays

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