JPS5524464A - Complex semiconductor system - Google Patents

Complex semiconductor system

Info

Publication number
JPS5524464A
JPS5524464A JP9725178A JP9725178A JPS5524464A JP S5524464 A JPS5524464 A JP S5524464A JP 9725178 A JP9725178 A JP 9725178A JP 9725178 A JP9725178 A JP 9725178A JP S5524464 A JPS5524464 A JP S5524464A
Authority
JP
Japan
Prior art keywords
thickness
dielectric strength
dielectric
plate
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9725178A
Other languages
Japanese (ja)
Other versions
JPS6122859B2 (en
Inventor
Hitoshi Matsuzaki
Akira Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9725178A priority Critical patent/JPS5524464A/en
Publication of JPS5524464A publication Critical patent/JPS5524464A/en
Publication of JPS6122859B2 publication Critical patent/JPS6122859B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To make the circumferential portion of an insulating plae thicker than the portion directly under a wiring metallic plate thereof for reducing the tehrmal resistance between a semiconductor element and a metallic fan without affecting dielectric strength. CONSTITUTION:A wiring metallic plate 13 is selver-soldered 12 on an insulating plate 11 of ceramic for example. While the thickness D of the circumferential portion of said insulating plate 11 is kept at a value necessary for obtaining a dielectric strength, that (d) directly under said wiring metallic plate 13 thereof is lessened for lowering thermal resistance thereof. With excessive decrease in said thickness (d), however, the problem of the dielectric breakdown of said insulating plate 11 occurs. In the case of ceramic, therefore, the lower limit of said thickness (d) is 0.3mm when dielectric strength is 2.000VAC. Thereby, dielectric strengrh depends on creeping discharge that considerably depends on said thickness D so that dielectric strength can be increased. On the other hand, heat conducgivity can be radised by lessening said thickness (d).
JP9725178A 1978-08-11 1978-08-11 Complex semiconductor system Granted JPS5524464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9725178A JPS5524464A (en) 1978-08-11 1978-08-11 Complex semiconductor system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9725178A JPS5524464A (en) 1978-08-11 1978-08-11 Complex semiconductor system

Publications (2)

Publication Number Publication Date
JPS5524464A true JPS5524464A (en) 1980-02-21
JPS6122859B2 JPS6122859B2 (en) 1986-06-03

Family

ID=14187343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9725178A Granted JPS5524464A (en) 1978-08-11 1978-08-11 Complex semiconductor system

Country Status (1)

Country Link
JP (1) JPS5524464A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326025U (en) * 1976-08-12 1978-03-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326025U (en) * 1976-08-12 1978-03-06

Also Published As

Publication number Publication date
JPS6122859B2 (en) 1986-06-03

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