JPS5527651A - Method of forming electrode for p-type inp crystal surface - Google Patents

Method of forming electrode for p-type inp crystal surface

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Publication number
JPS5527651A
JPS5527651A JP10092078A JP10092078A JPS5527651A JP S5527651 A JPS5527651 A JP S5527651A JP 10092078 A JP10092078 A JP 10092078A JP 10092078 A JP10092078 A JP 10092078A JP S5527651 A JPS5527651 A JP S5527651A
Authority
JP
Japan
Prior art keywords
type inp
mask layer
crystal surface
forming electrode
inp crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10092078A
Other languages
Japanese (ja)
Inventor
Koichi Sugiyama
Kunishige Oe
Seigo Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10092078A priority Critical patent/JPS5527651A/en
Publication of JPS5527651A publication Critical patent/JPS5527651A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To make it possible to form selectively an ohmic electrode of good attachability without introducing into a crystal distortions or flaws, by removing SiO2 mask layer in the process of Zn diffusion.
CONSTITUTION: On N-type InP single crystal base 1 are grown N-type InP 2, GaInAsP 3, P-type InP 4 as well as N-type Ga1-yIny As1-xPx thin film 10. Here, x=0W0.8, y=0.5W0.9. Next, acid resisting mask layer 11 made of SiO2 is formed, and stripi-shaped opening 10' is provided on this. Below this is exposed a part of P-type Inp crystal layer 4. Then, mask layer 11 is removed, and the entire upper surface is coated with Zn film 6 by evaporation. This is heat treated at 300-400°C and thereby P side ohmic electrode is formed.
COPYRIGHT: (C)1980,JPO&Japio
JP10092078A 1978-08-21 1978-08-21 Method of forming electrode for p-type inp crystal surface Pending JPS5527651A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10092078A JPS5527651A (en) 1978-08-21 1978-08-21 Method of forming electrode for p-type inp crystal surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10092078A JPS5527651A (en) 1978-08-21 1978-08-21 Method of forming electrode for p-type inp crystal surface

Publications (1)

Publication Number Publication Date
JPS5527651A true JPS5527651A (en) 1980-02-27

Family

ID=14286773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10092078A Pending JPS5527651A (en) 1978-08-21 1978-08-21 Method of forming electrode for p-type inp crystal surface

Country Status (1)

Country Link
JP (1) JPS5527651A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS635519A (en) * 1986-06-25 1988-01-11 Nec Corp Formation of semiconductor electrode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5269284A (en) * 1975-12-05 1977-06-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5269284A (en) * 1975-12-05 1977-06-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS635519A (en) * 1986-06-25 1988-01-11 Nec Corp Formation of semiconductor electrode

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