JPS526093A - Production method of semiconductor device - Google Patents

Production method of semiconductor device

Info

Publication number
JPS526093A
JPS526093A JP8186975A JP8186975A JPS526093A JP S526093 A JPS526093 A JP S526093A JP 8186975 A JP8186975 A JP 8186975A JP 8186975 A JP8186975 A JP 8186975A JP S526093 A JPS526093 A JP S526093A
Authority
JP
Japan
Prior art keywords
semiconductor device
production method
ordenary
grow
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8186975A
Other languages
Japanese (ja)
Inventor
Kunio Aiki
Michiharu Nakamura
Shigeo Yamashita
Junichi Umeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8186975A priority Critical patent/JPS526093A/en
Publication of JPS526093A publication Critical patent/JPS526093A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: In order to make Ga1-yAlyAs(1≥y≥0) and so on grow through ordenary liquid-crystal growing method on a wafer being constituted with Ga1-xAlx As and so on which contains more than 10% of Al.
COPYRIGHT: (C)1977,JPO&Japio
JP8186975A 1975-07-04 1975-07-04 Production method of semiconductor device Pending JPS526093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8186975A JPS526093A (en) 1975-07-04 1975-07-04 Production method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8186975A JPS526093A (en) 1975-07-04 1975-07-04 Production method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS526093A true JPS526093A (en) 1977-01-18

Family

ID=13758464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8186975A Pending JPS526093A (en) 1975-07-04 1975-07-04 Production method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS526093A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144991A (en) * 1976-05-28 1977-12-02 Agency Of Ind Science & Technol Production of distribution feedback type semiconductor laser
JPS59129473A (en) * 1983-01-14 1984-07-25 Toshiba Corp Semiconductor laser device and manufacture thereof
JPS59129486A (en) * 1983-01-14 1984-07-25 Toshiba Corp Semiconductor laser device and manufacture thereof
JPH04155987A (en) * 1990-10-19 1992-05-28 Hikari Keisoku Gijutsu Kaihatsu Kk Semiconductor distribution feedback laser device and its manufacture

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144991A (en) * 1976-05-28 1977-12-02 Agency Of Ind Science & Technol Production of distribution feedback type semiconductor laser
JPS59129473A (en) * 1983-01-14 1984-07-25 Toshiba Corp Semiconductor laser device and manufacture thereof
JPS59129486A (en) * 1983-01-14 1984-07-25 Toshiba Corp Semiconductor laser device and manufacture thereof
JPH04155987A (en) * 1990-10-19 1992-05-28 Hikari Keisoku Gijutsu Kaihatsu Kk Semiconductor distribution feedback laser device and its manufacture

Similar Documents

Publication Publication Date Title
JPS5297666A (en) Production of semiconductor device containing pn junctions
JPS5245273A (en) Method for production of semiconductor device
JPS5274280A (en) Semiconductor device and its production
JPS52152184A (en) Semiconductor device
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS5263067A (en) Production of semiconductor device
JPS5254385A (en) Production of semiconductor light emitting device
JPS5348669A (en) Growth method of semiconductor crystal
JPS52127189A (en) Semiconductor device
JPS51111057A (en) Crystal growing device
JPS5354972A (en) Production of semiconductor device
JPS5333569A (en) Method of reducing lattice defects of single crystal
JPS53113280A (en) Method of producing crystal
JPS51142499A (en) Crystal growing method
JPS51126036A (en) Semi-conductor crystal growth method
JPS5330885A (en) Production of semiconductor light emitting element
JPS52116070A (en) Process for lqiuid phase epitaxial growth
JPS52143754A (en) Annealing method of compound semiconductor single crystal
JPS5231664A (en) Production method of semiconductor device
JPS5242377A (en) Method of etching gaalas
JPS52127188A (en) Semiconductor device
JPS53142172A (en) Manufacture of semiconductor device
JPS5255471A (en) Impurity doping method of gallium arsenide vapor growth crystal
JPS5292475A (en) Growth method of semiconductor crystal
JPS51140474A (en) Method of fabricating semiconductor crystal