JPS5529154A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5529154A
JPS5529154A JP10251678A JP10251678A JPS5529154A JP S5529154 A JPS5529154 A JP S5529154A JP 10251678 A JP10251678 A JP 10251678A JP 10251678 A JP10251678 A JP 10251678A JP S5529154 A JPS5529154 A JP S5529154A
Authority
JP
Japan
Prior art keywords
grow
crystal
impurities
layers
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10251678A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP10251678A priority Critical patent/JPS5529154A/en
Publication of JPS5529154A publication Critical patent/JPS5529154A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To eliminate uneveness of crystal pattern and occurrence of defective crystal and also to improve backward characteristics, when forming at least 2 armophous semiconductor layers having different energy bands on base plates, by changing in advance stoichiometric ratios of these substances. CONSTITUTION:Non-single crystal layers including amorphous layer are piled in layers and made to grow on an electro-conductive base plate such as metal or semiconductor, etc., or on an insulated base plate such as polyamide or vinyl chloride. Thus, those base plates to be made to grow are put into a react or made of quartz, and then, the reactor is kept at reduced pressure of 0.1-10 Torr, supplied with PH3 and AsH3 gases containing such impurities as P and As and a silicic compound gas containing SiH4, etc., and a carrier gas containing HCl, etc., and heated to allow an n type layer to grow. Then, the reactor is supplied with gallium chloride containing such impurities as Ga and B, etc., and also B2H6 gas for allowing a p type layer to grow. At this time, impurities concentration is selecbed within a range of 10<14>-5X10<22>/cm<3> and temperature is selected within a range of 0-900 deg.C so that the structure becomes amorphous or multi-crystal.
JP10251678A 1978-08-23 1978-08-23 Semiconductor device Pending JPS5529154A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10251678A JPS5529154A (en) 1978-08-23 1978-08-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10251678A JPS5529154A (en) 1978-08-23 1978-08-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5529154A true JPS5529154A (en) 1980-03-01

Family

ID=14329514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10251678A Pending JPS5529154A (en) 1978-08-23 1978-08-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5529154A (en)

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764989A (en) * 1980-10-08 1982-04-20 Nippon Telegr & Teleph Corp <Ntt> Double method-junction type photosemiconductor device
US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
US4450316A (en) * 1981-07-17 1984-05-22 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous silicon photovoltaic device having two-layer transparent electrode
US4460670A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, N or O and dopant
US4572881A (en) * 1980-06-25 1986-02-25 Shunpei Yamazaki Printing member for electrostatic photocopying
JPS61287176A (en) * 1980-05-19 1986-12-17 エナジー・コンバーション・デバイセス・インコーポレーテッド Substrate and photovoltaic device having the same
US4642144A (en) * 1983-10-06 1987-02-10 Exxon Research And Engineering Company Proximity doping of amorphous semiconductors
US4889782A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Electrostatic photocopying machine
US4889783A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4971872A (en) * 1980-06-25 1990-11-20 Shunpei Yamazaki Electrostatic photocopying machine
US4999270A (en) * 1980-06-25 1991-03-12 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5008171A (en) * 1980-06-25 1991-04-16 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5070364A (en) * 1980-06-25 1991-12-03 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5103262A (en) * 1980-06-25 1992-04-07 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5143808A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5144367A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
USRE35198E (en) * 1978-03-03 1996-04-02 Canon Kabushiki Kaisha Image forming member for electrophotography
US5543636A (en) * 1984-05-18 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor
US5545503A (en) * 1980-06-25 1996-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of making printing member for electrostatic photocopying
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
US6180991B1 (en) * 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6236064B1 (en) * 1991-03-15 2001-05-22 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON ELECTRON DEVICES=1977 *
PHILOSOPHICAL MAGAZINE=1977 *

Cited By (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE35198E (en) * 1978-03-03 1996-04-02 Canon Kabushiki Kaisha Image forming member for electrophotography
US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
JPS61287176A (en) * 1980-05-19 1986-12-17 エナジー・コンバーション・デバイセス・インコーポレーテッド Substrate and photovoltaic device having the same
US4999270A (en) * 1980-06-25 1991-03-12 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5545503A (en) * 1980-06-25 1996-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of making printing member for electrostatic photocopying
US5103262A (en) * 1980-06-25 1992-04-07 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4572881A (en) * 1980-06-25 1986-02-25 Shunpei Yamazaki Printing member for electrostatic photocopying
US4582770A (en) * 1980-06-25 1986-04-15 Shunpei Yamazaki Printing member for electrostatic photocopying
US4587187A (en) * 1980-06-25 1986-05-06 Shunpei Yamazaki Printing member for electrostatic photocopying
US4598031A (en) * 1980-06-25 1986-07-01 Shunpei Yamazaki Printing member for electrostatic photocopying
US4600670A (en) * 1980-06-25 1986-07-15 Shunpei Yamazaki Printing member for electrostatic photocopying
US5070364A (en) * 1980-06-25 1991-12-03 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5144367A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4889782A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Electrostatic photocopying machine
US4889783A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4971872A (en) * 1980-06-25 1990-11-20 Shunpei Yamazaki Electrostatic photocopying machine
US5143808A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5008171A (en) * 1980-06-25 1991-04-16 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5303007A (en) * 1980-06-25 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Printing apparatus for electrostatic photocopying
JPS5764989A (en) * 1980-10-08 1982-04-20 Nippon Telegr & Teleph Corp <Ntt> Double method-junction type photosemiconductor device
US4499331A (en) * 1981-07-17 1985-02-12 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous semiconductor and amorphous silicon photovoltaic device
US4491682A (en) * 1981-07-17 1985-01-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous silicon photovoltaic device including a two-layer transparent electrode
US4450316A (en) * 1981-07-17 1984-05-22 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous silicon photovoltaic device having two-layer transparent electrode
US4460670A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, N or O and dopant
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6180991B1 (en) * 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6503771B1 (en) 1983-08-22 2003-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device
US4642144A (en) * 1983-10-06 1987-02-10 Exxon Research And Engineering Company Proximity doping of amorphous semiconductors
US5543636A (en) * 1984-05-18 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor
US6660574B1 (en) 1984-05-18 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Method of forming a semiconductor device including recombination center neutralizer
US6734499B1 (en) 1984-05-18 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
US6680486B1 (en) 1984-05-18 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US6635520B1 (en) 1984-05-18 2003-10-21 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US6011277A (en) * 1990-11-20 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US6023075A (en) * 1990-12-25 2000-02-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
US6236064B1 (en) * 1991-03-15 2001-05-22 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same

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