JPS5632400A - Vapor phase growing method for gallium phosphide layer - Google Patents
Vapor phase growing method for gallium phosphide layerInfo
- Publication number
- JPS5632400A JPS5632400A JP10358079A JP10358079A JPS5632400A JP S5632400 A JPS5632400 A JP S5632400A JP 10358079 A JP10358079 A JP 10358079A JP 10358079 A JP10358079 A JP 10358079A JP S5632400 A JPS5632400 A JP S5632400A
- Authority
- JP
- Japan
- Prior art keywords
- zone
- temp
- gallium
- gallium phosphide
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910005540 GaP Inorganic materials 0.000 title abstract 6
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 title abstract 6
- 239000012808 vapor phase Substances 0.000 title abstract 4
- 229910000154 gallium phosphate Inorganic materials 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 239000011261 inert gas Substances 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To form a high purity gallium phosphide layer in vapor phase by thermally decomposing gallium orthophosphate in a reducing atmosphere in a higher temp. zone and introducing the resulting gases onto a gallium phosphide single crystal water in a lower temp. zone.
CONSTITUTION: Gallium phosphide is obtd. in vapor phase with high mass producibility using inexpensive gallium orthophosphate. For example, a higher temp. zone of 1,000°C and a lower temp. zonc are formed in reaction furnace 1 with heater 2 and heater 3, respectively. Gallium orthophosphate in container 5 is set in the higher temp. zone, and gallium phosphide single crystal wafer 6 on stand 7 in the lower temp. zone. While the internal temp. of furnace 1 is raised, inert gas is fed from guide pipe 8. The inert gas is then changed over to hydrogen gas to cause the reaction of formula I in the higher temp. zone and the reaction of formula II in the lower temp. zone, thereby growing a gallium phosphide layer in vapor phase. Hydrogen arsenide may be fed from guide pipe 9 together with hydrogen gas to grow gallium phosphoarsenide on wafer 3.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10358079A JPS5632400A (en) | 1979-08-16 | 1979-08-16 | Vapor phase growing method for gallium phosphide layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10358079A JPS5632400A (en) | 1979-08-16 | 1979-08-16 | Vapor phase growing method for gallium phosphide layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5632400A true JPS5632400A (en) | 1981-04-01 |
Family
ID=14357711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10358079A Pending JPS5632400A (en) | 1979-08-16 | 1979-08-16 | Vapor phase growing method for gallium phosphide layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5632400A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001080291A1 (en) * | 2000-04-17 | 2001-10-25 | Mezey James J Sr | Methods and apparatus for thermally processing wafers |
-
1979
- 1979-08-16 JP JP10358079A patent/JPS5632400A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001080291A1 (en) * | 2000-04-17 | 2001-10-25 | Mezey James J Sr | Methods and apparatus for thermally processing wafers |
| US6774060B2 (en) | 2000-04-17 | 2004-08-10 | Avansys, Llc. | Methods and apparatus for thermally processing wafers |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5529154A (en) | Semiconductor device | |
| GB1306988A (en) | Reaction vessels for the preparation of semiconductor devices | |
| JPS5632400A (en) | Vapor phase growing method for gallium phosphide layer | |
| JPS54133480A (en) | Growth method for liquid phase epitaxial | |
| JPS54106081A (en) | Growth method in vapor phase | |
| JPS5469062A (en) | Vapor growth method for magnespinel | |
| JPS56105746A (en) | Transportation method of dopant in vapor phase growth | |
| JPS5591819A (en) | Vapor phase growth method | |
| JPS5234668A (en) | Gaseous phase growing process of semiconductor | |
| JPS5474672A (en) | Gaas vapor phase growth method | |
| JPS5429560A (en) | Gas phase growth method for semiconductor | |
| JPS54110987A (en) | Gaseous growing of semiconductor | |
| JPS5382163A (en) | Semiconductor vapor phase growth method | |
| JPS5559716A (en) | Liquid phase growing method of 3-5 group compound semiconductor | |
| JPS57205400A (en) | Vapor phase growing method for gallium arsenide | |
| JPS53148277A (en) | Controlling method of goping gas in vapor phase growth of semiconductor | |
| JPS52153375A (en) | Vapor phase growth method for g#a# | |
| JPS5461463A (en) | Vapor phase growth method for semiconductor | |
| JPS5524413A (en) | Process of epitaxial growth for semiconductor | |
| JPS5591815A (en) | Silicon epitaxial growth | |
| JPS55140799A (en) | Gallium nitride crystal growing method | |
| JPS5493358A (en) | Boat for growing for liquid phase epitaxial | |
| JPS54102295A (en) | Epitaxial crowth method | |
| JPS57200291A (en) | Vapor-phase growing method of compound semiconductor | |
| JPS5587424A (en) | Semiconductor device |