JPS5532077A - Photoresist baking method - Google Patents

Photoresist baking method

Info

Publication number
JPS5532077A
JPS5532077A JP10532478A JP10532478A JPS5532077A JP S5532077 A JPS5532077 A JP S5532077A JP 10532478 A JP10532478 A JP 10532478A JP 10532478 A JP10532478 A JP 10532478A JP S5532077 A JPS5532077 A JP S5532077A
Authority
JP
Japan
Prior art keywords
film
baking
photoresist
minutes
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10532478A
Other languages
Japanese (ja)
Inventor
Shusuke Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP10532478A priority Critical patent/JPS5532077A/en
Publication of JPS5532077A publication Critical patent/JPS5532077A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To intensify adhesion strength with film and increase the processing precision, by exposing and developing the photoresist, baking at low temperature, and then backing at high temperature. CONSTITUTION:An SiO2 film 2 is formed on a glass substrate 1, and a photoresist 4 is spread and dried, then exposed and developed. After baking at low temperature for 20 minutes at 140 deg.C, the resist 4 is polymerized and crosslinked to increase the thermal characteristics. Then, by baking at high temperature for 20 minutes at 200 deg.C, the adhesion strength with the film 2 is intensified. As a result, the amount of side etching of the film 2 in the next etching process is limited to 2 to 3 times of the thickness of the film 2. Thus, the film measuring more than about 1 mum in the thickness of the film 2 in particular may be processed at high precision.
JP10532478A 1978-08-28 1978-08-28 Photoresist baking method Pending JPS5532077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10532478A JPS5532077A (en) 1978-08-28 1978-08-28 Photoresist baking method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10532478A JPS5532077A (en) 1978-08-28 1978-08-28 Photoresist baking method

Publications (1)

Publication Number Publication Date
JPS5532077A true JPS5532077A (en) 1980-03-06

Family

ID=14404525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10532478A Pending JPS5532077A (en) 1978-08-28 1978-08-28 Photoresist baking method

Country Status (1)

Country Link
JP (1) JPS5532077A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103078003A (en) * 2012-12-28 2013-05-01 中国电子科技集团公司第十一研究所 Method and device for photoetching focal plane detector indium column

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49116976A (en) * 1973-03-09 1974-11-08
JPS5223401A (en) * 1975-08-15 1977-02-22 Hitachi Ltd Method of etching photography

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49116976A (en) * 1973-03-09 1974-11-08
JPS5223401A (en) * 1975-08-15 1977-02-22 Hitachi Ltd Method of etching photography

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103078003A (en) * 2012-12-28 2013-05-01 中国电子科技集团公司第十一研究所 Method and device for photoetching focal plane detector indium column

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