JPS5612733A - Ion etching method - Google Patents
Ion etching methodInfo
- Publication number
- JPS5612733A JPS5612733A JP8767179A JP8767179A JPS5612733A JP S5612733 A JPS5612733 A JP S5612733A JP 8767179 A JP8767179 A JP 8767179A JP 8767179 A JP8767179 A JP 8767179A JP S5612733 A JPS5612733 A JP S5612733A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- stepped
- photoresist film
- sample
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To form a tapered side end of a sample stepped on the surface by a physical etching of the stepped section in which a protective film is applied over the entire surface of the sample and the etching is given thereto with an ion impact from above. CONSTITUTION:A semiconductor substrate 1 is coated with an aluminum conductive layer 2 on which the photoresist film 3 is entirely formed. The aluminum conductive layer 2 is pointed sharply at the stepped sections as illustrated related to the etching accuracy. Thereafter, the ion beam enters the photoresist film 3 at about 30 deg. to perform etching. At the stepped sections, the etching proceeds faster as the photoresist film 3 is comparably thinner. After the completion of the required etching, with the removal of the photoresist 3, the aluminum is formed in a gentle taper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8767179A JPS5612733A (en) | 1979-07-11 | 1979-07-11 | Ion etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8767179A JPS5612733A (en) | 1979-07-11 | 1979-07-11 | Ion etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5612733A true JPS5612733A (en) | 1981-02-07 |
Family
ID=13921401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8767179A Pending JPS5612733A (en) | 1979-07-11 | 1979-07-11 | Ion etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5612733A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59117725A (en) * | 1982-12-24 | 1984-07-07 | Nippon Telegr & Teleph Corp <Ntt> | Production of thin film head |
| JPS62258236A (en) * | 1986-05-01 | 1987-11-10 | Nhk Spring Co Ltd | Valve spring for engine |
| JPH01135932A (en) * | 1987-11-02 | 1989-05-29 | Altenkirchener Kunststoff Gmbh | Tube member composed of return deformable elastic synthetic resin and manufacture thereof |
-
1979
- 1979-07-11 JP JP8767179A patent/JPS5612733A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59117725A (en) * | 1982-12-24 | 1984-07-07 | Nippon Telegr & Teleph Corp <Ntt> | Production of thin film head |
| JPS62258236A (en) * | 1986-05-01 | 1987-11-10 | Nhk Spring Co Ltd | Valve spring for engine |
| JPH01135932A (en) * | 1987-11-02 | 1989-05-29 | Altenkirchener Kunststoff Gmbh | Tube member composed of return deformable elastic synthetic resin and manufacture thereof |
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