JPS5533010A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5533010A
JPS5533010A JP10437578A JP10437578A JPS5533010A JP S5533010 A JPS5533010 A JP S5533010A JP 10437578 A JP10437578 A JP 10437578A JP 10437578 A JP10437578 A JP 10437578A JP S5533010 A JPS5533010 A JP S5533010A
Authority
JP
Japan
Prior art keywords
base
gate
impurities
diffusion
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10437578A
Other languages
Japanese (ja)
Inventor
Akihiko Furukawa
Koichi Kanzaki
Minoru Taguchi
Hajime Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10437578A priority Critical patent/JPS5533010A/en
Priority to GB7929463A priority patent/GB2029100B/en
Publication of JPS5533010A publication Critical patent/JPS5533010A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To accomplish a higher speed of I<2>L gate by specifying the degree of the diffusion and the concentration of the impurities in arrnaging a hrizontal element having the I<2>L gate and a normal vertical pipolar element each on two sections of an epitaxial layer separated after it grows on the semiconductor substrate. CONSTITUTION:Two N<+>-type buried regions 4 are formed by diffusion on a P-type Si substrate 1, and a N-type layer is epitaxially grown entirely on the regions. Then, the layer 3 is separated into two islands by a P<+>-type region 3. An I<2>L gate is provided on one island and a normal bipolar element on the other island. Here, an emitter 11 and an external base of an injector horizontal element for I<2>L gate is made higher in the centration of impurities than an internal base 14 immediately below a collector of the vertical element. Thus, a double base construction is formed with a larger degree of the diffusion. On the other hand, the bipolar element also is developed as a double base construction by forming an external base 15, an external base of the I<2>L gate and shallow internal base 16. Here, the concentration of impurities of the internal base 16 is made higher than that of the internal base 14.
JP10437578A 1978-08-29 1978-08-29 Semiconductor integrated circuit Pending JPS5533010A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10437578A JPS5533010A (en) 1978-08-29 1978-08-29 Semiconductor integrated circuit
GB7929463A GB2029100B (en) 1978-08-29 1979-08-23 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10437578A JPS5533010A (en) 1978-08-29 1978-08-29 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5533010A true JPS5533010A (en) 1980-03-08

Family

ID=14379029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10437578A Pending JPS5533010A (en) 1978-08-29 1978-08-29 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5533010A (en)

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