JPS5534489A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5534489A
JPS5534489A JP10787378A JP10787378A JPS5534489A JP S5534489 A JPS5534489 A JP S5534489A JP 10787378 A JP10787378 A JP 10787378A JP 10787378 A JP10787378 A JP 10787378A JP S5534489 A JPS5534489 A JP S5534489A
Authority
JP
Japan
Prior art keywords
type semiconductor
jfet
semiconductor layers
semiconductor layer
low density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10787378A
Other languages
Japanese (ja)
Inventor
Kunihiko Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP10787378A priority Critical patent/JPS5534489A/en
Publication of JPS5534489A publication Critical patent/JPS5534489A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To facilitate the forming with ease a number of JFET for high voltage power thru the method wherein the process of forming semiconductor layers of high density on substrate, the process of forming semiconductor layers of low density on the foregoing layers and the process of introducing impurities of inverse conduction electrode selectively are repeated.
CONSTITUTION: N-type semiconductor layer 2 of high density to become drain of JFET is epitaxial grown on n-type semiconductor substrate 1, upon which n-type semiconductor layer 3 of low density to become channel is also epitaxial grown. Within the semiconductor layer 3, high density p-type impurity gates 4 of specific stripe form are selectively formed. On those gates, low density n-type semiconductor layers 5 are grown and are made as drain. The above procedures are repeated which construct JFET for high voltage power three dimentionally. In the procedures, semiconductor layers 5 may be left out.
COPYRIGHT: (C)1980,JPO&Japio
JP10787378A 1978-09-01 1978-09-01 Manufacture of semiconductor device Pending JPS5534489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10787378A JPS5534489A (en) 1978-09-01 1978-09-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10787378A JPS5534489A (en) 1978-09-01 1978-09-01 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5534489A true JPS5534489A (en) 1980-03-11

Family

ID=14470244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10787378A Pending JPS5534489A (en) 1978-09-01 1978-09-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5534489A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60234376A (en) * 1984-05-07 1985-11-21 Fujitsu Ltd Junction type field effect transistor and manufacture thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3564358A (en) * 1967-11-15 1971-02-16 Siemens Ag Integrated circuit structure containing multiple sandwich layers of monocrystalline semiconductor and insulator material
JPS5082977A (en) * 1973-11-20 1975-07-04

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3564358A (en) * 1967-11-15 1971-02-16 Siemens Ag Integrated circuit structure containing multiple sandwich layers of monocrystalline semiconductor and insulator material
JPS5082977A (en) * 1973-11-20 1975-07-04

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60234376A (en) * 1984-05-07 1985-11-21 Fujitsu Ltd Junction type field effect transistor and manufacture thereof

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