JPS5571073A - Junction field effect semiconductor device and its manufacturing process - Google Patents

Junction field effect semiconductor device and its manufacturing process

Info

Publication number
JPS5571073A
JPS5571073A JP14417078A JP14417078A JPS5571073A JP S5571073 A JPS5571073 A JP S5571073A JP 14417078 A JP14417078 A JP 14417078A JP 14417078 A JP14417078 A JP 14417078A JP S5571073 A JPS5571073 A JP S5571073A
Authority
JP
Japan
Prior art keywords
type
semiconductor device
manufacturing process
field effect
junction field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14417078A
Other languages
Japanese (ja)
Inventor
Shuichi Shimizu
Toshiaki Kitahara
Fujihiko Inomata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14417078A priority Critical patent/JPS5571073A/en
Publication of JPS5571073A publication Critical patent/JPS5571073A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To minimize dispersion of characteristics, improve pressure resistance and also to enlarge gm by forming p-type semiconductor layer working as a channel domain through epitaxial growth.
CONSTITUTION: A p--type epitaxial layer 11 is formed on one principal surface of an n+-substrate 10, and an n+-type gate domain 13 is formed with an oxide film 12 formed on the surface as a mask. Next, p+-type source and drain 15, 16 are formed with an oxide film 14 formed newly on the surface of the p--type epitaxial layer as a mask, and then electrodes G, S, D to be connected to gate, source, drain respectively are formed.
COPYRIGHT: (C)1980,JPO&Japio
JP14417078A 1978-11-24 1978-11-24 Junction field effect semiconductor device and its manufacturing process Pending JPS5571073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14417078A JPS5571073A (en) 1978-11-24 1978-11-24 Junction field effect semiconductor device and its manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14417078A JPS5571073A (en) 1978-11-24 1978-11-24 Junction field effect semiconductor device and its manufacturing process

Publications (1)

Publication Number Publication Date
JPS5571073A true JPS5571073A (en) 1980-05-28

Family

ID=15355822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14417078A Pending JPS5571073A (en) 1978-11-24 1978-11-24 Junction field effect semiconductor device and its manufacturing process

Country Status (1)

Country Link
JP (1) JPS5571073A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915996A (en) * 1972-06-07 1974-02-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915996A (en) * 1972-06-07 1974-02-12

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