JPS5536932A - Manufacturing of light emitting element - Google Patents
Manufacturing of light emitting elementInfo
- Publication number
- JPS5536932A JPS5536932A JP10859678A JP10859678A JPS5536932A JP S5536932 A JPS5536932 A JP S5536932A JP 10859678 A JP10859678 A JP 10859678A JP 10859678 A JP10859678 A JP 10859678A JP S5536932 A JPS5536932 A JP S5536932A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- growth
- solution
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 239000013078 crystal Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000007791 liquid phase Substances 0.000 abstract 1
- 230000005923 long-lasting effect Effects 0.000 abstract 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To obtain an element long lasting and uniform in characteristic at one time of crystal growth by forming a mask to check crystal growth on a semiconductor substrate with a rugged surface and controlling a growth solution for thermally balanced condition.
CONSTITUTION: A groove 22 is provided in stripe on the surface of a semiconductor substrate 21. A growth check film or SiN3 film 23 for example is laminated on the substrate 21. Next, it is partly etched off. In this case, a window on the protrusion of the substrate 21 is patterned wide and that on the dent narrow. Next, first layer 24, second layer 25, third layer 26 and fourth layer 27 are grown in sequence as dropping the temperature according to liquid phase epitaxial growth. In this case, the solution to grow the first layer 24 is supercooled to transmit ruggedness of the substrate 21 conscientiously. The solution for the second layer 25 is kept under thermally balanced condition, and the portion with wide window is grown thin and that with narrow window thick. Therefore a film thickness symmetrical to the center line of the layer is obtainable for the layer 25. Solutions for the layers 26, 27 are kept supercooled. Therefore the layers 26, 27 transmit ruggedness of the layer 25.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10859678A JPS5536932A (en) | 1978-09-06 | 1978-09-06 | Manufacturing of light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10859678A JPS5536932A (en) | 1978-09-06 | 1978-09-06 | Manufacturing of light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5536932A true JPS5536932A (en) | 1980-03-14 |
Family
ID=14488805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10859678A Pending JPS5536932A (en) | 1978-09-06 | 1978-09-06 | Manufacturing of light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5536932A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5987888A (en) * | 1982-11-10 | 1984-05-21 | Sharp Corp | Semiconductor laser element |
-
1978
- 1978-09-06 JP JP10859678A patent/JPS5536932A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5987888A (en) * | 1982-11-10 | 1984-05-21 | Sharp Corp | Semiconductor laser element |
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