JPS5673431A - Manufacture of thin plate semiconductor device - Google Patents

Manufacture of thin plate semiconductor device

Info

Publication number
JPS5673431A
JPS5673431A JP15002779A JP15002779A JPS5673431A JP S5673431 A JPS5673431 A JP S5673431A JP 15002779 A JP15002779 A JP 15002779A JP 15002779 A JP15002779 A JP 15002779A JP S5673431 A JPS5673431 A JP S5673431A
Authority
JP
Japan
Prior art keywords
crystal
face
thin plate
substrate
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15002779A
Other languages
Japanese (ja)
Inventor
Tadashi Komatsubara
Tatsuro Beppu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15002779A priority Critical patent/JPS5673431A/en
Publication of JPS5673431A publication Critical patent/JPS5673431A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain the thin plate of GaAlAs by etching a substrate crystal after a liquid-phase epitaxial layer has been formed on the crystal face (111)A of GaAs. CONSTITUTION:If the substrate crystal face which is contacted with the melted crystal is made to be (111)A, i.e., a Ga face of (111), the thickness is larger than that of a (100) face, and the thin plate whose light emitting wavelength is 9,000Angstrom or less can be obtained. The P type inversion temperature of said epitaxial layer is about 930 deg.C. Therefore, even though the maximum maintaining temperature of the melted crystal is, e.g., 980 deg.C, and the increase in the amount of the deposition of the crystal is intended, the undesired change of the composition in the vicinity of the P-N junction is not caused. The elimination of the GaAs substrate by the lapping and etching treatment after the formation of the epitaxial layer is easier than in the case of (100) face crystal substrate. In this constitution, the thin plate of the highly efficient GaAlAs infrared ray emitting element can be obtained.
JP15002779A 1979-11-21 1979-11-21 Manufacture of thin plate semiconductor device Pending JPS5673431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15002779A JPS5673431A (en) 1979-11-21 1979-11-21 Manufacture of thin plate semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15002779A JPS5673431A (en) 1979-11-21 1979-11-21 Manufacture of thin plate semiconductor device

Publications (1)

Publication Number Publication Date
JPS5673431A true JPS5673431A (en) 1981-06-18

Family

ID=15487888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15002779A Pending JPS5673431A (en) 1979-11-21 1979-11-21 Manufacture of thin plate semiconductor device

Country Status (1)

Country Link
JP (1) JPS5673431A (en)

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