JPS5541712A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5541712A JPS5541712A JP11397978A JP11397978A JPS5541712A JP S5541712 A JPS5541712 A JP S5541712A JP 11397978 A JP11397978 A JP 11397978A JP 11397978 A JP11397978 A JP 11397978A JP S5541712 A JPS5541712 A JP S5541712A
- Authority
- JP
- Japan
- Prior art keywords
- injection
- impurity
- ion
- production
- distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 5
- 238000002347 injection Methods 0.000 abstract 4
- 239000007924 injection Substances 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To improve the luminous efficiency by making a gentle slop distribution of impurity ion at around p-n joint part with injection of gallium ion into the p-n joint part when some impurity is injected, in the case of production of p-n type light emitting diode.
CONSTITUTION: In the case of production of light emitting diode whose p-n junction is made with injection of impurity ion into compound semiconductor base where in the one compound element being gallium. The p-n junction is formed with injection of gallium ion when some impurity is injected. Further, with injection of both Ga and Zn ions, the generation of Ga hole is limited. As the resutls, the diffusion of Zn is abnormally multiplied, and a gentle slop distribution of acceptor concentration is obtained. With this distribution of impurity ion, the luminous efficiency is improved.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11397978A JPS5541712A (en) | 1978-09-16 | 1978-09-16 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11397978A JPS5541712A (en) | 1978-09-16 | 1978-09-16 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5541712A true JPS5541712A (en) | 1980-03-24 |
Family
ID=14626000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11397978A Pending JPS5541712A (en) | 1978-09-16 | 1978-09-16 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5541712A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6281780A (en) * | 1985-10-05 | 1987-04-15 | Fujitsu Ltd | Manufacture of light receiving element |
| JPH02197583A (en) * | 1988-10-12 | 1990-08-06 | Deitsupusoole Kk | Formation of ceramic film by laser beam irradiation |
| JPH02254174A (en) * | 1989-03-27 | 1990-10-12 | Deitsupusoole Kk | Formation of ceramic film by laser irradiation |
-
1978
- 1978-09-16 JP JP11397978A patent/JPS5541712A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6281780A (en) * | 1985-10-05 | 1987-04-15 | Fujitsu Ltd | Manufacture of light receiving element |
| JPH02197583A (en) * | 1988-10-12 | 1990-08-06 | Deitsupusoole Kk | Formation of ceramic film by laser beam irradiation |
| JPH02254174A (en) * | 1989-03-27 | 1990-10-12 | Deitsupusoole Kk | Formation of ceramic film by laser irradiation |
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