JPS5542230A - Vapor phase growing device - Google Patents

Vapor phase growing device

Info

Publication number
JPS5542230A
JPS5542230A JP11394978A JP11394978A JPS5542230A JP S5542230 A JPS5542230 A JP S5542230A JP 11394978 A JP11394978 A JP 11394978A JP 11394978 A JP11394978 A JP 11394978A JP S5542230 A JPS5542230 A JP S5542230A
Authority
JP
Japan
Prior art keywords
stands
vapor phase
treated
phase growing
stages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11394978A
Other languages
Japanese (ja)
Inventor
Yukinobu Tanno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP11394978A priority Critical patent/JPS5542230A/en
Publication of JPS5542230A publication Critical patent/JPS5542230A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To enable many wafers to be treated in a bell jar type vapor phase growing device by setting a plurality of semiconductor substrate heating stands in stages in the device.
CONSTITUTION: The bell jar type vapor phase growing device mainly consists of quartz bell jar 1, substrate heaing stands 7, 7', and quartz nozzle 3. A reactive gas is fed like arrow 2 and flows from nozzle 3 like arrows 4, 4' and 5, 5' at the upper and lower stages, respectively. Substrates 6, 6' are heated with stands 7, 7' which are heated with heaters 10, 11 in upper stage heating stand holder 8 and lower stage heating stand holder 9. Holders 8, 9 are unified and rotatable. With this constitution many wafers can be treated, and many films of high uniformity can be grown. Three or more stages of heating stands enable much more wafers to be treated.
COPYRIGHT: (C)1980,JPO&Japio
JP11394978A 1978-09-14 1978-09-14 Vapor phase growing device Pending JPS5542230A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11394978A JPS5542230A (en) 1978-09-14 1978-09-14 Vapor phase growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11394978A JPS5542230A (en) 1978-09-14 1978-09-14 Vapor phase growing device

Publications (1)

Publication Number Publication Date
JPS5542230A true JPS5542230A (en) 1980-03-25

Family

ID=14625236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11394978A Pending JPS5542230A (en) 1978-09-14 1978-09-14 Vapor phase growing device

Country Status (1)

Country Link
JP (1) JPS5542230A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318236A (en) * 1976-08-02 1978-02-20 Nippon Aluminium Mfg Metallic sliding window
JPS54157444U (en) * 1978-04-25 1979-11-01
JPS60146336U (en) * 1984-03-09 1985-09-28 関西日本電気株式会社 Semiconductor device manufacturing equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318236A (en) * 1976-08-02 1978-02-20 Nippon Aluminium Mfg Metallic sliding window
JPS54157444U (en) * 1978-04-25 1979-11-01
JPS60146336U (en) * 1984-03-09 1985-09-28 関西日本電気株式会社 Semiconductor device manufacturing equipment

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