JPS6480019A - Vapor growth device - Google Patents

Vapor growth device

Info

Publication number
JPS6480019A
JPS6480019A JP62234780A JP23478087A JPS6480019A JP S6480019 A JPS6480019 A JP S6480019A JP 62234780 A JP62234780 A JP 62234780A JP 23478087 A JP23478087 A JP 23478087A JP S6480019 A JPS6480019 A JP S6480019A
Authority
JP
Japan
Prior art keywords
reaction gas
pipe
many
supplying
supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62234780A
Other languages
Japanese (ja)
Inventor
Keiichi Akagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62234780A priority Critical patent/JPS6480019A/en
Publication of JPS6480019A publication Critical patent/JPS6480019A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make the supply of reaction gas uniform and to form an extremely uniformly grown film by providing a pipe opened with many holes substantially in parallel for supplying reaction gas, and mounting many crystal substrates substantially in parallel around the pipe. CONSTITUTION:A pipe 9 opened with many reaction gas supplying holes 10 are so mounted substantially at the center of a reaction tube 2 as to be rotatable by a motor 8. A susceptor 6 for holding a crystalline substrate 7 is attached between the tube 2 and the pipe 9 for supplying reaction gas. The susceptor 6 is rotated while being heated at predetermined temperature of 700-900 deg.C by a high frequency coil 4. Reaction gas is introduced from a reaction gas supply port 9a, discharged from many holes 10 of the pipe 9, and a crystal is grown on the substrate 7. Thus, the supply of the reaction gas is made uniform to form an extremely uniformly grown film.
JP62234780A 1987-09-21 1987-09-21 Vapor growth device Pending JPS6480019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62234780A JPS6480019A (en) 1987-09-21 1987-09-21 Vapor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62234780A JPS6480019A (en) 1987-09-21 1987-09-21 Vapor growth device

Publications (1)

Publication Number Publication Date
JPS6480019A true JPS6480019A (en) 1989-03-24

Family

ID=16976256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62234780A Pending JPS6480019A (en) 1987-09-21 1987-09-21 Vapor growth device

Country Status (1)

Country Link
JP (1) JPS6480019A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256449A (en) * 1991-03-25 1993-10-26 Ngk Insulators, Ltd. Method for producing dies for extruding ceramic honeycomb bodies
KR100397140B1 (en) * 2000-12-21 2003-09-06 주식회사 디알텍 vacuum device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256449A (en) * 1991-03-25 1993-10-26 Ngk Insulators, Ltd. Method for producing dies for extruding ceramic honeycomb bodies
US5328513A (en) * 1991-03-25 1994-07-12 Ngk Insulators, Ltd. Apparatus for producing dies for extruding ceramic honeycomb bodies
KR100397140B1 (en) * 2000-12-21 2003-09-06 주식회사 디알텍 vacuum device

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