JPS5588323A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5588323A
JPS5588323A JP15986778A JP15986778A JPS5588323A JP S5588323 A JPS5588323 A JP S5588323A JP 15986778 A JP15986778 A JP 15986778A JP 15986778 A JP15986778 A JP 15986778A JP S5588323 A JPS5588323 A JP S5588323A
Authority
JP
Japan
Prior art keywords
wafer
heater
diffusion
impurities
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15986778A
Other languages
Japanese (ja)
Other versions
JPS633446B2 (en
Inventor
Norimasa Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15986778A priority Critical patent/JPS5588323A/en
Publication of JPS5588323A publication Critical patent/JPS5588323A/en
Publication of JPS633446B2 publication Critical patent/JPS633446B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To make diffusion of impurities uniform and also to decrease the unevenness of element characteristic in and between wafers by giving a vertical or rotary movement to a semiconductor wafer hold almost horizontally in a vertical diffusion furnace.
CONSTITUTION: A multitude of wafers 11 are mounted in a wafer holding jig 12 in a vertical diffusion furnace 13, which are held with a jig holder 16. The diffusion furnace 13 is provided with a heater 14 and arranged to introduce a carrier gas containing impurities from below. For diffusion treatment, the gas 15 is introduced in the furnace 13, the wafer 11 is heated to a given temperature by the heater 14, the jig holder 16 retaining the holding jig 2 is moved vertically and also rotated at the same time. Heat of the heater 14 and impurities of the gas 15 can thus be allowed to act uniformly to the wafer 11, and unevenness of element characteristic can be minimized consequently.
COPYRIGHT: (C)1980,JPO&Japio
JP15986778A 1978-12-27 1978-12-27 Manufacture of semiconductor device Granted JPS5588323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15986778A JPS5588323A (en) 1978-12-27 1978-12-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15986778A JPS5588323A (en) 1978-12-27 1978-12-27 Manufacture of semiconductor device

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP60290564A Division JPS61172325A (en) 1985-12-25 1985-12-25 Vertical type heat treating furnace
JP16792686A Division JPS6211224A (en) 1986-07-18 1986-07-18 Heat treatment method for semiconductor wafers
JP15110287A Division JPS6323313A (en) 1987-06-19 1987-06-19 Heat treatment method for semiconductor wafers
JP191891A Division JPH03273620A (en) 1991-01-11 1991-01-11 Heat treating method of semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS5588323A true JPS5588323A (en) 1980-07-04
JPS633446B2 JPS633446B2 (en) 1988-01-23

Family

ID=15702940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15986778A Granted JPS5588323A (en) 1978-12-27 1978-12-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5588323A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108735A (en) * 1981-12-23 1983-06-28 Fujitsu Ltd Basket for vertical type reaction tube
JPS58110034A (en) * 1981-12-24 1983-06-30 Fujitsu Ltd Vertical vapor phase epitaxial device
JPS5974621A (en) * 1982-10-21 1984-04-27 Stanley Electric Co Ltd Impurity diffusion and jig therefor
JPS59232434A (en) * 1983-06-16 1984-12-27 Nippon Telegr & Teleph Corp <Ntt> Work rotating apparatus in vacuum treatment apparatus
JPS6127625A (en) * 1984-07-18 1986-02-07 Deisuko Saiyaa Japan:Kk Heat treatment process and device of semiconductor wafer
JPS6211224A (en) * 1986-07-18 1987-01-20 Hitachi Ltd Heat treatment method for semiconductor wafers
JPS633136U (en) * 1986-06-24 1988-01-11
JPH0258825A (en) * 1988-08-24 1990-02-28 Nec Kyushu Ltd Vertical reduced-pressure cvd apparatus
JPH02152224A (en) * 1988-12-02 1990-06-12 Toshiba Corp Vapor growth apparatus
JPH0467619A (en) * 1990-07-09 1992-03-03 Nec Kyushu Ltd Semiconductor manufacturing device
JPH05157006A (en) * 1991-11-29 1993-06-22 Kubota Corp Engine exhaust heat recovery device
JPH06349738A (en) * 1993-06-08 1994-12-22 Nec Corp Vertical low-pressure cvd device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0267137A (en) * 1988-09-02 1990-03-07 Komori Printing Mach Co Ltd Automatic dust removal device for printing cylinder

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108735A (en) * 1981-12-23 1983-06-28 Fujitsu Ltd Basket for vertical type reaction tube
JPS58110034A (en) * 1981-12-24 1983-06-30 Fujitsu Ltd Vertical vapor phase epitaxial device
JPS5974621A (en) * 1982-10-21 1984-04-27 Stanley Electric Co Ltd Impurity diffusion and jig therefor
JPS59232434A (en) * 1983-06-16 1984-12-27 Nippon Telegr & Teleph Corp <Ntt> Work rotating apparatus in vacuum treatment apparatus
JPS6127625A (en) * 1984-07-18 1986-02-07 Deisuko Saiyaa Japan:Kk Heat treatment process and device of semiconductor wafer
JPS633136U (en) * 1986-06-24 1988-01-11
JPS6211224A (en) * 1986-07-18 1987-01-20 Hitachi Ltd Heat treatment method for semiconductor wafers
JPH0258825A (en) * 1988-08-24 1990-02-28 Nec Kyushu Ltd Vertical reduced-pressure cvd apparatus
JPH02152224A (en) * 1988-12-02 1990-06-12 Toshiba Corp Vapor growth apparatus
JPH0467619A (en) * 1990-07-09 1992-03-03 Nec Kyushu Ltd Semiconductor manufacturing device
JPH05157006A (en) * 1991-11-29 1993-06-22 Kubota Corp Engine exhaust heat recovery device
JPH06349738A (en) * 1993-06-08 1994-12-22 Nec Corp Vertical low-pressure cvd device

Also Published As

Publication number Publication date
JPS633446B2 (en) 1988-01-23

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