JPS5544779A - Producing method for mos semiconductor device - Google Patents
Producing method for mos semiconductor deviceInfo
- Publication number
- JPS5544779A JPS5544779A JP11894678A JP11894678A JPS5544779A JP S5544779 A JPS5544779 A JP S5544779A JP 11894678 A JP11894678 A JP 11894678A JP 11894678 A JP11894678 A JP 11894678A JP S5544779 A JPS5544779 A JP S5544779A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- multicrystal
- sio
- mask
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To form contact holes of a source and a drain wituout necessity of particular masking sets by depositing multicrystal Si layer on a semiconductor substrate through a gate oxide layer and utilizing the fact that oxide speed of multicrystal Si is speedy.
CONSTITUTION: Thick field SiO2 layer 2 is mounted on both ends of P-type Si substrate 1 and thin gate SiO2 layer 3 is mounted on a area surrounded thereby and multicrystal Si layer 4 is grawn on whole surface. Then, heat treatment is made to alter only upper surface part of the layer 4 to SiO2 layer 5 and whole surface is coated with Si3N4 layer 6 to leave only gate area and areas for forming contact holes of source and drain. Then, as masking them, heat treatment is made and the exposed multicrystal layer 4 is altered into SiO2 layer 7 and the layers 6 and 5 are removed and a mask 8 of resist layer is mounted only on the gate area. Then using this mask, the layer 4 in the contact hole forming area is removed by etching and the mask 8 is also removed. Then, the layer 3 in the part of contact hole is removed to form by diffusion N+-type source and drain areas 9 and 10.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11894678A JPS5544779A (en) | 1978-09-27 | 1978-09-27 | Producing method for mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11894678A JPS5544779A (en) | 1978-09-27 | 1978-09-27 | Producing method for mos semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5544779A true JPS5544779A (en) | 1980-03-29 |
| JPS6145867B2 JPS6145867B2 (en) | 1986-10-09 |
Family
ID=14749153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11894678A Granted JPS5544779A (en) | 1978-09-27 | 1978-09-27 | Producing method for mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5544779A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587867A (en) * | 1981-07-07 | 1983-01-17 | Nec Corp | Manufacture of semiconductor device |
-
1978
- 1978-09-27 JP JP11894678A patent/JPS5544779A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587867A (en) * | 1981-07-07 | 1983-01-17 | Nec Corp | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6145867B2 (en) | 1986-10-09 |
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