JPS5550656A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5550656A
JPS5550656A JP12365878A JP12365878A JPS5550656A JP S5550656 A JPS5550656 A JP S5550656A JP 12365878 A JP12365878 A JP 12365878A JP 12365878 A JP12365878 A JP 12365878A JP S5550656 A JPS5550656 A JP S5550656A
Authority
JP
Japan
Prior art keywords
regions
emitter
base
film
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12365878A
Other languages
Japanese (ja)
Inventor
Takashi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12365878A priority Critical patent/JPS5550656A/en
Publication of JPS5550656A publication Critical patent/JPS5550656A/en
Pending legal-status Critical Current

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Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To decrease noises, by eliminating the need for special barrier metal by extracting electrodes from emitter regions through polycrystal Si layers and by shifting emitter-base junction and emitter contact holes on the same plane.
CONSTITUTION: A p-type base region 2 is diffusion-formed into a n-type Si substrate 1 and three n-type emitter regions 3 are mounted into the region 2, but the regions 3 are made up in approximate, parallel thin strips at that time and divided into three portions by partitioning the midway. Thin strip base-contact regions 4 are diffusion-built up being positioned among these regions 3, and portions except these regions are covered with an insulating film 5. Thin low resistance polycrystal layers 6 connected to the region 2 are grown on the regions 3 and the film 5, and the layers 6 and the film 5 are coated with an insulating film 8 provided with emitter-contact holes 7 and base-contact holes 9. Comb-teeth-like emitter-base electrodes 10, 11, which teeth mutually engage, are mounted onto the film 8 by utilizing the holes 7, 9.
COPYRIGHT: (C)1980,JPO&Japio
JP12365878A 1978-10-09 1978-10-09 Semiconductor device Pending JPS5550656A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12365878A JPS5550656A (en) 1978-10-09 1978-10-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12365878A JPS5550656A (en) 1978-10-09 1978-10-09 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5550656A true JPS5550656A (en) 1980-04-12

Family

ID=14866061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12365878A Pending JPS5550656A (en) 1978-10-09 1978-10-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5550656A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5974672A (en) * 1982-10-20 1984-04-27 Mitsubishi Electric Corp Semiconductor integrated circuit device
CN106257629A (en) * 2015-06-22 2016-12-28 格罗方德半导体公司 There is the bipolar junction transistor that biconial emitter stage refers to

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5974672A (en) * 1982-10-20 1984-04-27 Mitsubishi Electric Corp Semiconductor integrated circuit device
CN106257629A (en) * 2015-06-22 2016-12-28 格罗方德半导体公司 There is the bipolar junction transistor that biconial emitter stage refers to
CN106257629B (en) * 2015-06-22 2019-10-15 格罗方德半导体公司 Bipolar junction transistor with double tapered emitter fingers

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