JPS5553458A - Charge coupled element - Google Patents

Charge coupled element

Info

Publication number
JPS5553458A
JPS5553458A JP12716378A JP12716378A JPS5553458A JP S5553458 A JPS5553458 A JP S5553458A JP 12716378 A JP12716378 A JP 12716378A JP 12716378 A JP12716378 A JP 12716378A JP S5553458 A JPS5553458 A JP S5553458A
Authority
JP
Japan
Prior art keywords
electrode
signal charge
under
ccd
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12716378A
Other languages
Japanese (ja)
Inventor
Hiroshi Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12716378A priority Critical patent/JPS5553458A/en
Publication of JPS5553458A publication Critical patent/JPS5553458A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/464—Two-phase CCD

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To shorten time for transffering of charge form charge input to transfer channel by protecting signal charge from remaining and decreasing deformation of the output power. CONSTITUTION:In dual chanenel type CCD, P<-> diffusion area 60 of low density is extended to an area under an electrode 4 for distributing signal charge to two transfer ways 5, 5' by MOS construction. The operation of CCD in this construction is same as conventional type. A signal charge sampled under an adjacent electrode 3 of same construction passes under the electrode 4 upon transfering to first electrodes 6a, 8b of the transfer way. However, the underside of the electrode 4 is separated to surface channel area and buried channel area and consequently the surface channel of low moving degree is preactically shortened. Accordingly, the time for passing of signal charge under the electrode 4 is shortened and CCD having higher ability can be realized.
JP12716378A 1978-10-16 1978-10-16 Charge coupled element Pending JPS5553458A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12716378A JPS5553458A (en) 1978-10-16 1978-10-16 Charge coupled element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12716378A JPS5553458A (en) 1978-10-16 1978-10-16 Charge coupled element

Publications (1)

Publication Number Publication Date
JPS5553458A true JPS5553458A (en) 1980-04-18

Family

ID=14953196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12716378A Pending JPS5553458A (en) 1978-10-16 1978-10-16 Charge coupled element

Country Status (1)

Country Link
JP (1) JPS5553458A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546368A (en) * 1981-09-17 1985-10-08 Nippon Electric Co., Ltd. Charge transfer device having a precisely controlled injection rate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144284A (en) * 1976-05-27 1977-12-01 Nec Corp Semiconductor device
JPS5376683A (en) * 1976-12-17 1978-07-07 Matsushita Electric Ind Co Ltd Charge transfer element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144284A (en) * 1976-05-27 1977-12-01 Nec Corp Semiconductor device
JPS5376683A (en) * 1976-12-17 1978-07-07 Matsushita Electric Ind Co Ltd Charge transfer element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546368A (en) * 1981-09-17 1985-10-08 Nippon Electric Co., Ltd. Charge transfer device having a precisely controlled injection rate

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