JPS5555574A - Semiconductor oscillator - Google Patents

Semiconductor oscillator

Info

Publication number
JPS5555574A
JPS5555574A JP12882678A JP12882678A JPS5555574A JP S5555574 A JPS5555574 A JP S5555574A JP 12882678 A JP12882678 A JP 12882678A JP 12882678 A JP12882678 A JP 12882678A JP S5555574 A JPS5555574 A JP S5555574A
Authority
JP
Japan
Prior art keywords
gate
region
oscillator
successively
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12882678A
Other languages
Japanese (ja)
Inventor
Michio Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12882678A priority Critical patent/JPS5555574A/en
Publication of JPS5555574A publication Critical patent/JPS5555574A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

PURPOSE: To provide the subject oscillator wherein gate regions and source regions are separately arranged in a line repeatedly and successively on the main surface of a semiconductor substrate thereby to simplify the adjustment of the oscillation frequency when it is changed.
CONSTITUTION: The electrostatic induction transistor with two gates of the oscillator has such an organization that, on the main surface of a semiconductor substrate consisting of a drain region 11 and an N-type high specific-resistance action layer 13, there are arranged repeatedly and successively in a line a second gate region 8, a source region 12, a first gate layer 7 and a source region 12, and the first gate layer 7 is used as a feedback terminal for the oscillation and the second gate region 8 as an oscillation frequency varying terminal.
COPYRIGHT: (C)1980,JPO&Japio
JP12882678A 1978-10-17 1978-10-17 Semiconductor oscillator Pending JPS5555574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12882678A JPS5555574A (en) 1978-10-17 1978-10-17 Semiconductor oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12882678A JPS5555574A (en) 1978-10-17 1978-10-17 Semiconductor oscillator

Publications (1)

Publication Number Publication Date
JPS5555574A true JPS5555574A (en) 1980-04-23

Family

ID=14994359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12882678A Pending JPS5555574A (en) 1978-10-17 1978-10-17 Semiconductor oscillator

Country Status (1)

Country Link
JP (1) JPS5555574A (en)

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