JPS5558524A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5558524A JPS5558524A JP13216878A JP13216878A JPS5558524A JP S5558524 A JPS5558524 A JP S5558524A JP 13216878 A JP13216878 A JP 13216878A JP 13216878 A JP13216878 A JP 13216878A JP S5558524 A JPS5558524 A JP S5558524A
- Authority
- JP
- Japan
- Prior art keywords
- film
- slice
- line
- region
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To minimize a strain to arise on an Si slice at diffusing impurities from its one face by providing an insulating film having an opening along a split line to prevent diffusion on the other face.
CONSTITUTION: SiO2 films 4 and 4' to work as a mask at the time of base diffusion are sticked on both front and back of an n-type Si slice 1 working as a collector, and a photoresist film 8 having an opening is applied on the back film 4' at a region corresponding to a split line 9 of the slice 1. Next, the front film 4 is removed all and the back film 4' by the portion exposed in the line 9 through etching with the film 8 working as a mask. Thus the back of the slice 1 other than the line 9 is all covered with the film 4', and p-type base region 10 and p-type split domain 11 are formed within the line 9 on front and back of the slice 1 respectively by diffusing Al. The film 4' is removed thereafter, n-type emitter region is provided in the slice 1 coming between region 11 and separated from the region 11.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53132168A JPS5850413B2 (en) | 1978-10-26 | 1978-10-26 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53132168A JPS5850413B2 (en) | 1978-10-26 | 1978-10-26 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5558524A true JPS5558524A (en) | 1980-05-01 |
| JPS5850413B2 JPS5850413B2 (en) | 1983-11-10 |
Family
ID=15074947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53132168A Expired JPS5850413B2 (en) | 1978-10-26 | 1978-10-26 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5850413B2 (en) |
-
1978
- 1978-10-26 JP JP53132168A patent/JPS5850413B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5850413B2 (en) | 1983-11-10 |
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