JPS5558532A - X-ray exposing mask and manufacture of semiconductor device - Google Patents
X-ray exposing mask and manufacture of semiconductor deviceInfo
- Publication number
- JPS5558532A JPS5558532A JP13081478A JP13081478A JPS5558532A JP S5558532 A JPS5558532 A JP S5558532A JP 13081478 A JP13081478 A JP 13081478A JP 13081478 A JP13081478 A JP 13081478A JP S5558532 A JPS5558532 A JP S5558532A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- absorber
- ray
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Bipolar Transistors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE: To simplify a mask alignment process by using a resist mask variant in thickness partly after exposure and development which is prepared with an X-ray exposing mask having a plural kind of absorber patterns variant in X-ray permeability.
CONSTITUTION: For X-ray exposing mask, a rigid thin film like Si or a flexible thin film like polyamide is used as substrate 1, and an absorber which is large in X-ray absorption coefficient and superior in corrosion resistance like Au, Pt, etc. is formed thereon. In this case, the absorber is not given in uniform thickness but in a thick film 3 and a thin film 2, and the space surrounded by the film 2 is left blank. Next, n-type layer 15 is subjected to epitaxial growth on n+-type Si substrate 14, covered with an SiO2 film 16. And when patterning the resist film applied thereon, the absorber prepared previously is placed to exposure and development, thereby producing a thin resist layer 17 and a thick resist layer 18. Then, it is used for mask according to a normal process to diffuse and form p-type base region 19, 20.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13081478A JPS5558532A (en) | 1978-10-24 | 1978-10-24 | X-ray exposing mask and manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13081478A JPS5558532A (en) | 1978-10-24 | 1978-10-24 | X-ray exposing mask and manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5558532A true JPS5558532A (en) | 1980-05-01 |
Family
ID=15043326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13081478A Pending JPS5558532A (en) | 1978-10-24 | 1978-10-24 | X-ray exposing mask and manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5558532A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62291116A (en) * | 1986-06-11 | 1987-12-17 | Nippon Telegr & Teleph Corp <Ntt> | X-ray mask and method for forming pattern using said mask |
| JPS6378527A (en) * | 1986-09-20 | 1988-04-08 | Mitsubishi Electric Corp | X-ray mask for forming a T-type control electrode, method for manufacturing the mask, and method for forming a T-type control electrode using the mask |
-
1978
- 1978-10-24 JP JP13081478A patent/JPS5558532A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62291116A (en) * | 1986-06-11 | 1987-12-17 | Nippon Telegr & Teleph Corp <Ntt> | X-ray mask and method for forming pattern using said mask |
| JPS6378527A (en) * | 1986-09-20 | 1988-04-08 | Mitsubishi Electric Corp | X-ray mask for forming a T-type control electrode, method for manufacturing the mask, and method for forming a T-type control electrode using the mask |
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