JPS5588331A - X-ray exposing mask - Google Patents

X-ray exposing mask

Info

Publication number
JPS5588331A
JPS5588331A JP16245478A JP16245478A JPS5588331A JP S5588331 A JPS5588331 A JP S5588331A JP 16245478 A JP16245478 A JP 16245478A JP 16245478 A JP16245478 A JP 16245478A JP S5588331 A JPS5588331 A JP S5588331A
Authority
JP
Japan
Prior art keywords
ray
silicon
substrate
film
exposing mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16245478A
Other languages
Japanese (ja)
Other versions
JPS617011B2 (en
Inventor
Tadashi Nakamura
Keizo Hidejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP16245478A priority Critical patent/JPS5588331A/en
Publication of JPS5588331A publication Critical patent/JPS5588331A/en
Publication of JPS617011B2 publication Critical patent/JPS617011B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To obtain an X-ray exposing mask having improved mechanical strength by providing synthetic resin substrate containing a needle crystal or a fine wire of the material with small X-ray absorption coefficient.
CONSTITUTION: Polyimide prepolymer containing a silicon needle crystal is applied on the principal surface of a silicon substrate 1 to form a polyimide film 2 having 3W5μm thickness. Next, an X-ray absorption pattern 3 consisting of a metal is formed on the polyimide film 2 by a generally known method. Then, the silicon substrate 1 is subjected to a selective etching to form a silicon frame 4 left on the peripheral edge of the polymide film 2. The mechanical strength of the synthetic resin film substrate to support a mask pattern in thus improved, thereby an X-ray exposing mask capable of serving repeatedly is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP16245478A 1978-12-27 1978-12-27 X-ray exposing mask Granted JPS5588331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16245478A JPS5588331A (en) 1978-12-27 1978-12-27 X-ray exposing mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16245478A JPS5588331A (en) 1978-12-27 1978-12-27 X-ray exposing mask

Publications (2)

Publication Number Publication Date
JPS5588331A true JPS5588331A (en) 1980-07-04
JPS617011B2 JPS617011B2 (en) 1986-03-03

Family

ID=15754913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16245478A Granted JPS5588331A (en) 1978-12-27 1978-12-27 X-ray exposing mask

Country Status (1)

Country Link
JP (1) JPS5588331A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606803A (en) * 1983-11-02 1986-08-19 U.S. Philips Corporation Method of manufacturing a mask for the production of patterns in lacquer layers by means of X-ray lithography

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606803A (en) * 1983-11-02 1986-08-19 U.S. Philips Corporation Method of manufacturing a mask for the production of patterns in lacquer layers by means of X-ray lithography

Also Published As

Publication number Publication date
JPS617011B2 (en) 1986-03-03

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