JPS5565480A - Input diode - Google Patents

Input diode

Info

Publication number
JPS5565480A
JPS5565480A JP13954678A JP13954678A JPS5565480A JP S5565480 A JPS5565480 A JP S5565480A JP 13954678 A JP13954678 A JP 13954678A JP 13954678 A JP13954678 A JP 13954678A JP S5565480 A JPS5565480 A JP S5565480A
Authority
JP
Japan
Prior art keywords
domain
inp
avalanche
layer
inp layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13954678A
Other languages
Japanese (ja)
Inventor
Hisatsune Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13954678A priority Critical patent/JPS5565480A/en
Publication of JPS5565480A publication Critical patent/JPS5565480A/en
Pending legal-status Critical Current

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To improve DC-RF conversion efficiency by providing a domain, in an avalanche domain, which consists of a compound semiconductor of a different kind having larger ionization factor than that of compound semiconductors on both sides.
CONSTITUTION: Through continuous multilayer vapor phase epitaxial growth and p+ diffusion, p+-InP layer 1, n-InP layer 2, n-In0.53Ga0.47As layer 3, n+-InP layer 4, n-InP layer 5 and n+-InP substrate 6 are formed. Then, the portion 3 out of the avalanche domains 2 and 3 is arranged to In0.53Ga0.47As which is large in ionization factor and also capable of grid-matching InP, and a domain is provided, in the avalanche domain, which consists of a compound semiconductor of a different kind having an ionization factor of the compound semiconductors on both sides. DC-RF conversion efficiency can be improved thereby.
COPYRIGHT: (C)1980,JPO&Japio
JP13954678A 1978-11-13 1978-11-13 Input diode Pending JPS5565480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13954678A JPS5565480A (en) 1978-11-13 1978-11-13 Input diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13954678A JPS5565480A (en) 1978-11-13 1978-11-13 Input diode

Publications (1)

Publication Number Publication Date
JPS5565480A true JPS5565480A (en) 1980-05-16

Family

ID=15247775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13954678A Pending JPS5565480A (en) 1978-11-13 1978-11-13 Input diode

Country Status (1)

Country Link
JP (1) JPS5565480A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503277A (en) * 1973-05-11 1975-01-14

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503277A (en) * 1973-05-11 1975-01-14

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