JPS5538080A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5538080A
JPS5538080A JP11205978A JP11205978A JPS5538080A JP S5538080 A JPS5538080 A JP S5538080A JP 11205978 A JP11205978 A JP 11205978A JP 11205978 A JP11205978 A JP 11205978A JP S5538080 A JPS5538080 A JP S5538080A
Authority
JP
Japan
Prior art keywords
type
layer
bpt
semiconductor device
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11205978A
Other languages
Japanese (ja)
Other versions
JPS5919474B2 (en
Inventor
Hisao Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP53112059A priority Critical patent/JPS5919474B2/en
Publication of JPS5538080A publication Critical patent/JPS5538080A/en
Publication of JPS5919474B2 publication Critical patent/JPS5919474B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To compensate positive dependency of BPT collector current upon temperature by separating a junction type FET gate from a BPT base in a semiconductor device which combines a bipolar transistor (BPT) with an FET. CONSTITUTION:An N-type collector layer 3 is formed on the surface of a P-type base layer 2 made up on an N-type layer 1 and a groove 6 is mounted around the P-type base layer 2. Furthermore, an N-type semiconductor layer 5 is formed on the back side of the N-type collector layer 1 and a P-type gate layer 4a is equipped diffusing P-type impurities through a groove 6.
JP53112059A 1978-09-11 1978-09-11 semiconductor equipment Expired JPS5919474B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53112059A JPS5919474B2 (en) 1978-09-11 1978-09-11 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53112059A JPS5919474B2 (en) 1978-09-11 1978-09-11 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5538080A true JPS5538080A (en) 1980-03-17
JPS5919474B2 JPS5919474B2 (en) 1984-05-07

Family

ID=14577003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53112059A Expired JPS5919474B2 (en) 1978-09-11 1978-09-11 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5919474B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972193A (en) * 1982-10-18 1984-04-24 アルプス電気株式会社 Electronic part inserting machine
JPS59107600A (en) * 1982-12-13 1984-06-21 アルプス電気株式会社 Device for accepting and delivering part in electronic part inserting machine
JP2020074362A (en) * 2015-11-10 2020-05-14 アナログ・デヴァイシズ・グローバル・アンリミテッド・カンパニー FET-bipolar transistor combinations, and switches with such FET-bipolar transistor combinations

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972193A (en) * 1982-10-18 1984-04-24 アルプス電気株式会社 Electronic part inserting machine
JPS59107600A (en) * 1982-12-13 1984-06-21 アルプス電気株式会社 Device for accepting and delivering part in electronic part inserting machine
JP2020074362A (en) * 2015-11-10 2020-05-14 アナログ・デヴァイシズ・グローバル・アンリミテッド・カンパニー FET-bipolar transistor combinations, and switches with such FET-bipolar transistor combinations

Also Published As

Publication number Publication date
JPS5919474B2 (en) 1984-05-07

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