JPS5575254A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5575254A
JPS5575254A JP14778278A JP14778278A JPS5575254A JP S5575254 A JPS5575254 A JP S5575254A JP 14778278 A JP14778278 A JP 14778278A JP 14778278 A JP14778278 A JP 14778278A JP S5575254 A JPS5575254 A JP S5575254A
Authority
JP
Japan
Prior art keywords
substrate
layer
voltage
type
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14778278A
Other languages
Japanese (ja)
Inventor
Kazunori Ouchi
Toru Furuyama
Hiroshi Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14778278A priority Critical patent/JPS5575254A/en
Publication of JPS5575254A publication Critical patent/JPS5575254A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To internally contain a substrate voltage self-bias circuit in a semiconductor device by providing a reverse conductivity type semiconductor layer to the substrate on the back or in parallel with the substrate plane. CONSTITUTION:An n<+>-type layer 3 is provided on the surface of a p-type substrate with a gate oxide film 5 and a gate electrode 4 provided thereon. An n<+>-type layer 2 is formed on the back surface of the substrate 1. The layer 2 is connected to an external power supply, and the substrate 1 is connected to a substrate voltage self- bias circuit. The capacity of the pn-junction formed by the substrate 1 and the layer 2 bicomes floated capacity. The applied voltage is fixed to the lower voltage than the substrate voltage. According to this configuration, it can restrict the variation of the substrate voltage to low level.
JP14778278A 1978-12-01 1978-12-01 Semiconductor device Pending JPS5575254A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14778278A JPS5575254A (en) 1978-12-01 1978-12-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14778278A JPS5575254A (en) 1978-12-01 1978-12-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5575254A true JPS5575254A (en) 1980-06-06

Family

ID=15438059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14778278A Pending JPS5575254A (en) 1978-12-01 1978-12-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5575254A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58199558A (en) * 1982-05-17 1983-11-19 Matsushita Electronics Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110285A (en) * 1975-03-24 1976-09-29 Hitachi Ltd
JPS53102683A (en) * 1977-02-18 1978-09-07 Toshiba Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110285A (en) * 1975-03-24 1976-09-29 Hitachi Ltd
JPS53102683A (en) * 1977-02-18 1978-09-07 Toshiba Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58199558A (en) * 1982-05-17 1983-11-19 Matsushita Electronics Corp Semiconductor device

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