JPS556866A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS556866A JPS556866A JP7953378A JP7953378A JPS556866A JP S556866 A JPS556866 A JP S556866A JP 7953378 A JP7953378 A JP 7953378A JP 7953378 A JP7953378 A JP 7953378A JP S556866 A JPS556866 A JP S556866A
- Authority
- JP
- Japan
- Prior art keywords
- portions
- capacity
- silicon dioxide
- dioxide films
- thick silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To integrate an integrated circuit necessary for making up a number of capacity portions to a high degree, and to enlarge the capacity of the integrated circuit, by forming capacity portions so as to cover the upper surfaces of thick silicon dioxide films or other circuit elements.
CONSTITUTION: Thick silicon dioxide films 12 are partially built up on a surface of a P type silicon substrate 11, N type silicon ranges 13 are formed on portions where the thick silicon dioxide films 12 are not made up and insulators 15 and metallic matter 16 are built up. Thus, capacity portions are constituted which pure metal 14 and the metallic matter 16 form pair electrodes and the insulators 15 function as dielectric matter.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7953378A JPS556866A (en) | 1978-06-29 | 1978-06-29 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7953378A JPS556866A (en) | 1978-06-29 | 1978-06-29 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS556866A true JPS556866A (en) | 1980-01-18 |
Family
ID=13692623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7953378A Pending JPS556866A (en) | 1978-06-29 | 1978-06-29 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS556866A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58215067A (en) * | 1982-06-08 | 1983-12-14 | Nec Corp | Semiconductor integrated circuit device |
| JPS6377165A (en) * | 1986-09-19 | 1988-04-07 | Mitsubishi Electric Corp | Semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52114285A (en) * | 1976-03-22 | 1977-09-24 | Hitachi Ltd | Mis type semiconductor device |
-
1978
- 1978-06-29 JP JP7953378A patent/JPS556866A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52114285A (en) * | 1976-03-22 | 1977-09-24 | Hitachi Ltd | Mis type semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58215067A (en) * | 1982-06-08 | 1983-12-14 | Nec Corp | Semiconductor integrated circuit device |
| JPS6377165A (en) * | 1986-09-19 | 1988-04-07 | Mitsubishi Electric Corp | Semiconductor device |
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