JPS5570063A - Transistor and its preparation - Google Patents
Transistor and its preparationInfo
- Publication number
- JPS5570063A JPS5570063A JP14345078A JP14345078A JPS5570063A JP S5570063 A JPS5570063 A JP S5570063A JP 14345078 A JP14345078 A JP 14345078A JP 14345078 A JP14345078 A JP 14345078A JP S5570063 A JPS5570063 A JP S5570063A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- emitter
- impurities
- comparative
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000000052 comparative effect Effects 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To better high-frequency characteristics, by forming an emitter layer by the first region with the comparative, high concentration of impurities and the second region with the comparative, low concentration of impurities.
CONSTITUTION: A SiO2 film 2 is selectively mounted on a surface of an n-type silicon substrate 1, and a graph base layer 3 is manufactured by diffusing boron. An emitter layer deep portion 8A is formed, an epitaxial growth layer 11 is grown and an n+-layer 12 for electrode contact is produced on a surface of the epitaxial growth layer 11. Since emitter currents flow through the whole emitter deep portion n+-layer 8A approximately uniform during operation in high frequency, high- frequency characteristics are improved.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14345078A JPS5570063A (en) | 1978-11-22 | 1978-11-22 | Transistor and its preparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14345078A JPS5570063A (en) | 1978-11-22 | 1978-11-22 | Transistor and its preparation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5570063A true JPS5570063A (en) | 1980-05-27 |
| JPS6216555B2 JPS6216555B2 (en) | 1987-04-13 |
Family
ID=15338975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14345078A Granted JPS5570063A (en) | 1978-11-22 | 1978-11-22 | Transistor and its preparation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5570063A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5734357A (en) * | 1980-08-09 | 1982-02-24 | Sanken Electric Co Ltd | Semiconductor integrated circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4830713A (en) * | 1971-08-23 | 1973-04-23 | ||
| JPS5051672A (en) * | 1973-09-07 | 1975-05-08 |
-
1978
- 1978-11-22 JP JP14345078A patent/JPS5570063A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4830713A (en) * | 1971-08-23 | 1973-04-23 | ||
| JPS5051672A (en) * | 1973-09-07 | 1975-05-08 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5734357A (en) * | 1980-08-09 | 1982-02-24 | Sanken Electric Co Ltd | Semiconductor integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6216555B2 (en) | 1987-04-13 |
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