JPS558003A - Gaseous growth method and vertical type gaseous growth device - Google Patents

Gaseous growth method and vertical type gaseous growth device

Info

Publication number
JPS558003A
JPS558003A JP7860178A JP7860178A JPS558003A JP S558003 A JPS558003 A JP S558003A JP 7860178 A JP7860178 A JP 7860178A JP 7860178 A JP7860178 A JP 7860178A JP S558003 A JPS558003 A JP S558003A
Authority
JP
Japan
Prior art keywords
inner chamber
single crystal
base plate
gaseous growth
gaseous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7860178A
Other languages
Japanese (ja)
Inventor
Hideki Yamawaki
Hidetoshi Ishiwari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7860178A priority Critical patent/JPS558003A/en
Publication of JPS558003A publication Critical patent/JPS558003A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To achieve improvement of crystallizing performance and uniformity by utilizing single crystal growth only when growing gas mixing concentration ratio is in a stabilized condition.
CONSTITUTION: A base plate 12-holding inner chamber 6 and a liner tube 7 are put into a vertical reacting tube 1 and closed with a cover 8. By setting the inner chamber to No.1 position, the inner chamber is provided with N2 supply 4, and when single crystal growing gas which flows in the direction of C from an arrow A reached the prescribed concentration ratio, the inner chamber is turned by 180° to No.2 position. The growing gas is exposed to the surface of the base plate 12, which has been heated 11 in the inner chamber 6, and discharged 5. After gaseous growth for a prescribed period of time, the inner chamber is set back to No.1 position, and the inner chamber 6 is filled with N2 gas to cover the base plate. When gaseous growth of thin layer of Al2O3 single crystal or MgO.Al2O3 single crystal, etc., is allowed on Si single crystal base plate, it is possible to obtain a uniform thin layer of good crystallizing performance by employing this method.
COPYRIGHT: (C)1980,JPO&Japio
JP7860178A 1978-06-30 1978-06-30 Gaseous growth method and vertical type gaseous growth device Pending JPS558003A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7860178A JPS558003A (en) 1978-06-30 1978-06-30 Gaseous growth method and vertical type gaseous growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7860178A JPS558003A (en) 1978-06-30 1978-06-30 Gaseous growth method and vertical type gaseous growth device

Publications (1)

Publication Number Publication Date
JPS558003A true JPS558003A (en) 1980-01-21

Family

ID=13666412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7860178A Pending JPS558003A (en) 1978-06-30 1978-06-30 Gaseous growth method and vertical type gaseous growth device

Country Status (1)

Country Link
JP (1) JPS558003A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586147A (en) * 1981-07-03 1983-01-13 Nec Corp Semiconductor device and its manufacture
JPS6127622A (en) * 1984-07-18 1986-02-07 Mitsubishi Metal Corp Formation of iii-v group compound semiconductor multilayer film
JPS6134932A (en) * 1984-07-26 1986-02-19 Fujitsu Ltd Vapor growing process

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586147A (en) * 1981-07-03 1983-01-13 Nec Corp Semiconductor device and its manufacture
JPS6127622A (en) * 1984-07-18 1986-02-07 Mitsubishi Metal Corp Formation of iii-v group compound semiconductor multilayer film
JPS6134932A (en) * 1984-07-26 1986-02-19 Fujitsu Ltd Vapor growing process

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