JPS558031A - Semi-conductor device - Google Patents

Semi-conductor device

Info

Publication number: JPS558031A
Authority: JP; Japan
Prior art keywords: film; wiring; layer; metal; plated metal
Prior art date: 1978-06-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP8011378A

Other languages

English (en)

Inventor

Masaru Nakamura

Kazuhiro Kikuchi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Nippon Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-06-30

Filing date

1978-06-30

Publication date

1980-01-21

1978-06-30 Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp

1978-06-30 Priority to JP8011378A priority Critical patent/JPS558031A/ja

1980-01-21 Publication of JPS558031A publication Critical patent/JPS558031A/ja

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title abstract 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
239000002184 metal Substances 0.000 abstract 3
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
229910052681 coesite Inorganic materials 0.000 abstract 2
229910052593 corundum Inorganic materials 0.000 abstract 2
229910052906 cristobalite Inorganic materials 0.000 abstract 2
238000009413 insulation Methods 0.000 abstract 2
239000000377 silicon dioxide Substances 0.000 abstract 2
229910052682 stishovite Inorganic materials 0.000 abstract 2
229910052905 tridymite Inorganic materials 0.000 abstract 2
229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
229910018125 Al-Si Inorganic materials 0.000 abstract 1
229910018520 Al—Si Inorganic materials 0.000 abstract 1
229910052581 Si3N4 Inorganic materials 0.000 abstract 1
238000007743 anodising Methods 0.000 abstract 1
239000006185 dispersion Substances 0.000 abstract 1
238000000034 method Methods 0.000 abstract 1

Landscapes

Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

JP8011378A 1978-06-30 1978-06-30 Semi-conductor device Pending JPS558031A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP8011378A JPS558031A (en)	1978-06-30	1978-06-30	Semi-conductor device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP8011378A JPS558031A (en)	1978-06-30	1978-06-30	Semi-conductor device

Publications (1)

Publication Number	Publication Date
JPS558031A true JPS558031A (en)	1980-01-21

Family

ID=13709122

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP8011378A Pending JPS558031A (en)	1978-06-30	1978-06-30	Semi-conductor device

Country Status (1)

Country	Link
JP (1)	JPS558031A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH02341A (ja) *	1987-02-02	1990-01-05	Seiko Epson Corp	半導体装置及びその製造方法

1978
- 1978-06-30 JP JP8011378A patent/JPS558031A/ja active Pending

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH02341A (ja) *	1987-02-02	1990-01-05	Seiko Epson Corp	半導体装置及びその製造方法

Similar Documents

Publication	Publication Date	Title
JPS64756A (en)	1989-01-05	Semiconductor device and capacitor device and manufacture thereof
JPS57170550A (en)	1982-10-20	Manufacture of semiconductor device
JPS558031A (en)	1980-01-21	Semi-conductor device
JPS5731156A (en)	1982-02-19	Wiring pattern formation of integrated circuit device
JPS5469393A (en)	1979-06-04	Production of semiconductor device
JPS57193045A (en)	1982-11-27	Integrated circuit device and manufacture thereof
JPS5527644A (en)	1980-02-27	Multi-layer wiring type semiconductor device
JPS54110784A (en)	1979-08-30	Semiconductor device
JPS5661146A (en)	1981-05-26	Formation of multilayer wiring
JPS5715423A (en)	1982-01-26	Manufacture of semiconductor device
JPS56116641A (en)	1981-09-12	Manufacture of semiconductor device
JPS5418689A (en)	1979-02-10	Manufacture of semiconductor device
JPS56125856A (en)	1981-10-02	Manufacture of semiconductor device
JPS559415A (en)	1980-01-23	Semiconductor manufacturing method
JPS6480041A (en)	1989-03-24	Semiconductor integrated circuit device
JPS5378763A (en)	1978-07-12	Preparation for semiconductor device
JPS5212588A (en)	1977-01-31	Production method of semi-conductor device
JPS52117590A (en)	1977-10-03	Semiconductor device
JPS52151567A (en)	1977-12-16	Protecting method of wiring layers
JPS57130427A (en)	1982-08-12	Etching
KR930011114A (ko)	1993-06-23	반도체장치의 제조방법
JPS551150A (en)	1980-01-07	Method of fabricating semiconductor device
JPS5687346A (en)	1981-07-15	Manufacture of semiconductor device
JPS5458389A (en)	1979-05-11	Forming method of polyimide film in semiconductor device
JPS5340278A (en)	1978-04-12	Manufacture of semiconductor device