JPS5583267A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS5583267A
JPS5583267A JP15972578A JP15972578A JPS5583267A JP S5583267 A JPS5583267 A JP S5583267A JP 15972578 A JP15972578 A JP 15972578A JP 15972578 A JP15972578 A JP 15972578A JP S5583267 A JPS5583267 A JP S5583267A
Authority
JP
Japan
Prior art keywords
film
pattern
drain regions
electrode
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15972578A
Other languages
English (en)
Inventor
Eizo Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15972578A priority Critical patent/JPS5583267A/ja
Publication of JPS5583267A publication Critical patent/JPS5583267A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01324—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T or inverted-T
JP15972578A 1978-12-20 1978-12-20 Method of fabricating semiconductor device Pending JPS5583267A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15972578A JPS5583267A (en) 1978-12-20 1978-12-20 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15972578A JPS5583267A (en) 1978-12-20 1978-12-20 Method of fabricating semiconductor device

Publications (1)

Publication Number Publication Date
JPS5583267A true JPS5583267A (en) 1980-06-23

Family

ID=15699905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15972578A Pending JPS5583267A (en) 1978-12-20 1978-12-20 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS5583267A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4978626A (en) * 1988-09-02 1990-12-18 Motorola, Inc. LDD transistor process having doping sensitive endpoint etching
US5272100A (en) * 1988-09-08 1993-12-21 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with T-shaped gate electrode and manufacturing method therefor
US5471080A (en) * 1988-09-08 1995-11-28 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with a shaped gate electrode
US5543646A (en) * 1988-09-08 1996-08-06 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with a shaped gate electrode
JP2002532870A (ja) * 1998-12-07 2002-10-02 インテル・コーポレーション 切欠きゲートを備えたトランジスタ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54108582A (en) * 1978-02-15 1979-08-25 Toshiba Corp Manufacture of silicon type field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54108582A (en) * 1978-02-15 1979-08-25 Toshiba Corp Manufacture of silicon type field effect transistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4978626A (en) * 1988-09-02 1990-12-18 Motorola, Inc. LDD transistor process having doping sensitive endpoint etching
US5272100A (en) * 1988-09-08 1993-12-21 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with T-shaped gate electrode and manufacturing method therefor
US5471080A (en) * 1988-09-08 1995-11-28 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with a shaped gate electrode
US5543646A (en) * 1988-09-08 1996-08-06 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with a shaped gate electrode
US5834817A (en) * 1988-09-08 1998-11-10 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with a shaped gate electrode
JP2002532870A (ja) * 1998-12-07 2002-10-02 インテル・コーポレーション 切欠きゲートを備えたトランジスタ

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