JPS5584940A - Exposure processing method - Google Patents

Exposure processing method

Info

Publication number
JPS5584940A
JPS5584940A JP15891178A JP15891178A JPS5584940A JP S5584940 A JPS5584940 A JP S5584940A JP 15891178 A JP15891178 A JP 15891178A JP 15891178 A JP15891178 A JP 15891178A JP S5584940 A JPS5584940 A JP S5584940A
Authority
JP
Japan
Prior art keywords
substrate
mask
ray
contacting
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15891178A
Other languages
Japanese (ja)
Other versions
JPS6310577B2 (en
Inventor
Tadashi Nakamura
Keizo Hidejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP15891178A priority Critical patent/JPS5584940A/en
Publication of JPS5584940A publication Critical patent/JPS5584940A/en
Publication of JPS6310577B2 publication Critical patent/JPS6310577B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To obtain a precise pattern, when exposing X-ray in order to print the pattern, in production of LSI or the like, by adjusting the positions of substrate to be processed and the mask for X-ray exposure, contacting the positioning parts by special method, and contacting the substrate to be processed with the remaining part of the mask.
CONSTITUTION: A resist layer 23 is formed on the surface of a substrate to be processed, and in order to accurately position an X-ray absorbing pattern 25 formed on a substrate 24 of a mask for X-ray exposure 22 the substrate 24 is charged with electron beam or the like. Then, applying identical potential as that of substrate 24 to an objective lens 27, the positioning mark part of the substrate 24 is contacted with the surface of resist layer 23 on the substrate 21 by utilizing the electrostatic repulsive force. Then, the substrates 21, 22 are constacted with each other by vacuum suction, so that exposure process is performed. Thus, a precise mark position is determined by using the objective lens 27 in positioning, and the contacting is accurately performed by using the repulsive force of static electrocity, so that high-precision exposure may be attained.
COPYRIGHT: (C)1980,JPO&Japio
JP15891178A 1978-12-20 1978-12-20 Exposure processing method Granted JPS5584940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15891178A JPS5584940A (en) 1978-12-20 1978-12-20 Exposure processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15891178A JPS5584940A (en) 1978-12-20 1978-12-20 Exposure processing method

Publications (2)

Publication Number Publication Date
JPS5584940A true JPS5584940A (en) 1980-06-26
JPS6310577B2 JPS6310577B2 (en) 1988-03-08

Family

ID=15682033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15891178A Granted JPS5584940A (en) 1978-12-20 1978-12-20 Exposure processing method

Country Status (1)

Country Link
JP (1) JPS5584940A (en)

Also Published As

Publication number Publication date
JPS6310577B2 (en) 1988-03-08

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