JPS5656633A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS5656633A
JPS5656633A JP13273279A JP13273279A JPS5656633A JP S5656633 A JPS5656633 A JP S5656633A JP 13273279 A JP13273279 A JP 13273279A JP 13273279 A JP13273279 A JP 13273279A JP S5656633 A JPS5656633 A JP S5656633A
Authority
JP
Japan
Prior art keywords
substrate
pattern
contacted
constitution
periphery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13273279A
Other languages
Japanese (ja)
Inventor
Shuji Tabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13273279A priority Critical patent/JPS5656633A/en
Publication of JPS5656633A publication Critical patent/JPS5656633A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent damage and also to improve yield by a method wherein an identifying mark is formed in an untouched manner on a part of semiconductor substrate through photoengraving, and then a desired treatment is applied on the substrate. CONSTITUTION:At a position 2 notches 4 of the substrate 1 are contacted to pins 3, 3', a pin 3'' is contacted to a periphery of the substrate to rough locating, and then it is brought to an exposure position 2'. There arises a dead domain 7 of a pattern 6 of a photomask 5 on the periphery of the substrate. Therefore an indication 8 is exposed in the dead domain at the position 2 by controlling 12 a projector 11. Next, a precise locating is made at the position 2', and the pattern 6 of the mask 5 is exposed. Processes of development, etching and resist removal follow thereafter. According to this constitution, a mark can be formed together with a given pattern without damaging the surface of the substrate.
JP13273279A 1979-10-15 1979-10-15 Manufacture of semiconductor element Pending JPS5656633A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13273279A JPS5656633A (en) 1979-10-15 1979-10-15 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13273279A JPS5656633A (en) 1979-10-15 1979-10-15 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5656633A true JPS5656633A (en) 1981-05-18

Family

ID=15088290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13273279A Pending JPS5656633A (en) 1979-10-15 1979-10-15 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5656633A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138025A (en) * 1982-02-10 1983-08-16 Jeol Ltd Identification mark reading method
JPS6092606A (en) * 1983-10-26 1985-05-24 Nec Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138025A (en) * 1982-02-10 1983-08-16 Jeol Ltd Identification mark reading method
JPS6092606A (en) * 1983-10-26 1985-05-24 Nec Corp Manufacture of semiconductor device

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