JPS5585061A - Protective circuit for transistor - Google Patents

Protective circuit for transistor

Info

Publication number
JPS5585061A
JPS5585061A JP15743578A JP15743578A JPS5585061A JP S5585061 A JPS5585061 A JP S5585061A JP 15743578 A JP15743578 A JP 15743578A JP 15743578 A JP15743578 A JP 15743578A JP S5585061 A JPS5585061 A JP S5585061A
Authority
JP
Japan
Prior art keywords
transistor
base
collector
output transistor
surge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15743578A
Other languages
Japanese (ja)
Inventor
Koji Takebe
Ginrou Takemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15743578A priority Critical patent/JPS5585061A/en
Publication of JPS5585061A publication Critical patent/JPS5585061A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To simplify a surge protective circuit of an output transistor by connecting a transistor of an open base between a collector and an emitter or the collector and a base of the output transistor for switching the currents of inductive load. CONSTITUTION:When an output transistor Q1 for switching the currents of inductive load L, such as, a switching regulator, etc. is brought to OFF from ON, surge voltage is generated in the load L. A transistor Q2 or Q2' of an open base is connected between a collector and an emitter or between the collector and a base or the both of the transistor Q1 so as to protect the output transistor Q1 from the surge voltage, and the breakdown of junction is prevented. A base region function as the ballast resistance and has great quantity of resisting surge breakdown in the transistor of the open base for protection, thus miniaturizing and simplifying a protective element.
JP15743578A 1978-12-22 1978-12-22 Protective circuit for transistor Pending JPS5585061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15743578A JPS5585061A (en) 1978-12-22 1978-12-22 Protective circuit for transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15743578A JPS5585061A (en) 1978-12-22 1978-12-22 Protective circuit for transistor

Publications (1)

Publication Number Publication Date
JPS5585061A true JPS5585061A (en) 1980-06-26

Family

ID=15649576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15743578A Pending JPS5585061A (en) 1978-12-22 1978-12-22 Protective circuit for transistor

Country Status (1)

Country Link
JP (1) JPS5585061A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5879745A (en) * 1981-11-05 1983-05-13 Nec Corp Protective device for semiconductor integrated circuit
JPS6271257A (en) * 1985-07-05 1987-04-01 アメリカン　テレフオン　アンド　テレグラフ　カムパニ− Protecting circuit for induction load switch transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5150676A (en) * 1974-10-30 1976-05-04 Origin Electric Toranjisuta
JPS5358777A (en) * 1976-11-06 1978-05-26 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5150676A (en) * 1974-10-30 1976-05-04 Origin Electric Toranjisuta
JPS5358777A (en) * 1976-11-06 1978-05-26 Mitsubishi Electric Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5879745A (en) * 1981-11-05 1983-05-13 Nec Corp Protective device for semiconductor integrated circuit
JPS6271257A (en) * 1985-07-05 1987-04-01 アメリカン　テレフオン　アンド　テレグラフ　カムパニ− Protecting circuit for induction load switch transistor

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