JPS5586112A - Vapor phase growth method for 3-5 group compound semiconductor - Google Patents
Vapor phase growth method for 3-5 group compound semiconductorInfo
- Publication number
- JPS5586112A JPS5586112A JP15871178A JP15871178A JPS5586112A JP S5586112 A JPS5586112 A JP S5586112A JP 15871178 A JP15871178 A JP 15871178A JP 15871178 A JP15871178 A JP 15871178A JP S5586112 A JPS5586112 A JP S5586112A
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- phase growth
- pressures
- bell jar
- pressure gauge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 title abstract 3
- 150000001875 compounds Chemical class 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009827 uniform distribution Methods 0.000 abstract 1
- 239000002912 waste gas Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain a uniform III-V group compound semiconductor layer in good reproducibility by specifying the permissible upper bound of a gas pressure in a reaction furnace.
CONSTITUTION: A pressure gauge 12 capable of detecting gauge pressures 0W 500mm in water column is mounted adjacently to a quartz bell jar 11. Pressures in the bell jar 11 at the time of vapor phase growth can be measured on the pressure gauge 12. A growth layer with a uniform distribution in an electron density wafer is obtainable in good reproducibility through growing pressures in the bell jar within the limit of 100mm in water column on the pressure gauge 12; such growth conditions can be satisfied by, for example, arranging thicker piping of an exhaust system for a vapor phase growth device or by increasing the capacity of a waste gas treating equipment to improve conductance.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15871178A JPS5586112A (en) | 1978-12-25 | 1978-12-25 | Vapor phase growth method for 3-5 group compound semiconductor |
| DE19792928206 DE2928206C2 (en) | 1978-07-31 | 1979-07-12 | Vertical vapor phase waxing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15871178A JPS5586112A (en) | 1978-12-25 | 1978-12-25 | Vapor phase growth method for 3-5 group compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5586112A true JPS5586112A (en) | 1980-06-28 |
Family
ID=15677675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15871178A Pending JPS5586112A (en) | 1978-07-31 | 1978-12-25 | Vapor phase growth method for 3-5 group compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5586112A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57155723A (en) * | 1981-03-20 | 1982-09-25 | Sanyo Electric Co Ltd | Epitaxial growth method |
| JPS6196727A (en) * | 1984-10-17 | 1986-05-15 | Toshiba Ceramics Co Ltd | Gas exhauster for cvd furnace |
-
1978
- 1978-12-25 JP JP15871178A patent/JPS5586112A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57155723A (en) * | 1981-03-20 | 1982-09-25 | Sanyo Electric Co Ltd | Epitaxial growth method |
| JPS6196727A (en) * | 1984-10-17 | 1986-05-15 | Toshiba Ceramics Co Ltd | Gas exhauster for cvd furnace |
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