JPS5589996A - Test method for semiconductor memory unit and semiconductor memory unit suitable for it - Google Patents

Test method for semiconductor memory unit and semiconductor memory unit suitable for it

Info

Publication number
JPS5589996A
JPS5589996A JP15984278A JP15984278A JPS5589996A JP S5589996 A JPS5589996 A JP S5589996A JP 15984278 A JP15984278 A JP 15984278A JP 15984278 A JP15984278 A JP 15984278A JP S5589996 A JPS5589996 A JP S5589996A
Authority
JP
Japan
Prior art keywords
threshold voltage
semiconductor memory
memory unit
fetq
conduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15984278A
Other languages
Japanese (ja)
Other versions
JPS5931158B2 (en
Inventor
Atsushi Takai
Ryuji Kondo
Takaaki Hagiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP53159842A priority Critical patent/JPS5931158B2/en
Publication of JPS5589996A publication Critical patent/JPS5589996A/en
Publication of JPS5931158B2 publication Critical patent/JPS5931158B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE: To perform simple, high speed and accurate test, by discriminating the propriety of information hold through the performance of set and leaving of threshold voltage of FET forming each memory element and second threshold voltage set with a given system.
CONSTITUTION: The memory element of memory cells M11WMmn of matrix connection is formed with FET's Q11, Q11'..., and the conduction threshold voltage Vw1 between the source and drain of FETQ11... at information write-in can be unified to a constant value by alternately applying high voltage pulse having small width to the gate electrode and applying threshold voltage gradually increased. Further, FETQ11... are rapidly discharged under the conditions at 85°C for 24hr., and the specified reference voltage VR1 is fed to the gate electrode every FETQ11... lowered in the threshold voltage in response to the information hold characteristics. Further, when the presence of conduction or non-conduction between the source and the drain is detected, it is not necessary to store the state of each FET at information write-in, and the performance of information hold can accurately and in high speed be tested with a simple system only with the application of reference voltage after a given time.
COPYRIGHT: (C)1980,JPO&Japio
JP53159842A 1978-12-27 1978-12-27 Memory devices and how to use them Expired JPS5931158B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53159842A JPS5931158B2 (en) 1978-12-27 1978-12-27 Memory devices and how to use them

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53159842A JPS5931158B2 (en) 1978-12-27 1978-12-27 Memory devices and how to use them

Publications (2)

Publication Number Publication Date
JPS5589996A true JPS5589996A (en) 1980-07-08
JPS5931158B2 JPS5931158B2 (en) 1984-07-31

Family

ID=15702420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53159842A Expired JPS5931158B2 (en) 1978-12-27 1978-12-27 Memory devices and how to use them

Country Status (1)

Country Link
JP (1) JPS5931158B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55117034A (en) * 1979-02-28 1980-09-09 Yamaha Motor Co Ltd Apparatus for inhibiting rotation of rotatable part of engine
JPS57200993A (en) * 1981-06-02 1982-12-09 Matsushita Electronics Corp Semiconductor nonvolatile storage device
JPS5998394A (en) * 1982-11-26 1984-06-06 Hitachi Ltd semiconductor storage device
JPS6243898A (en) * 1985-08-21 1987-02-25 Toshiba Corp Non-volatile semiconductor memory device
US5237537A (en) * 1991-06-12 1993-08-17 Etron Technology, Inc. Fast compare circuit particularly for memory with redundant addressing components

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0186171U (en) * 1987-11-30 1989-06-07
JPH0186172U (en) * 1987-11-30 1989-06-07

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55117034A (en) * 1979-02-28 1980-09-09 Yamaha Motor Co Ltd Apparatus for inhibiting rotation of rotatable part of engine
JPS57200993A (en) * 1981-06-02 1982-12-09 Matsushita Electronics Corp Semiconductor nonvolatile storage device
JPS5998394A (en) * 1982-11-26 1984-06-06 Hitachi Ltd semiconductor storage device
JPS6243898A (en) * 1985-08-21 1987-02-25 Toshiba Corp Non-volatile semiconductor memory device
US5237537A (en) * 1991-06-12 1993-08-17 Etron Technology, Inc. Fast compare circuit particularly for memory with redundant addressing components

Also Published As

Publication number Publication date
JPS5931158B2 (en) 1984-07-31

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