JPS5591819A - Vapor phase growth method - Google Patents

Vapor phase growth method

Info

Publication number
JPS5591819A
JPS5591819A JP16479978A JP16479978A JPS5591819A JP S5591819 A JPS5591819 A JP S5591819A JP 16479978 A JP16479978 A JP 16479978A JP 16479978 A JP16479978 A JP 16479978A JP S5591819 A JPS5591819 A JP S5591819A
Authority
JP
Japan
Prior art keywords
temperature region
growth
crystal
temperature
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16479978A
Other languages
Japanese (ja)
Other versions
JPS6246975B2 (en
Inventor
Junji Komeno
Tanji Okawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16479978A priority Critical patent/JPS5591819A/en
Publication of JPS5591819A publication Critical patent/JPS5591819A/en
Publication of JPS6246975B2 publication Critical patent/JPS6246975B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain a sharp distribution of impurity concentration by providing inside of a reacting pipe not only a crystal-growth high-temperature region but also a secondary high- temperature region through a low-temperature region so that a crystal-growth substrate can be shifted to the secondary high-temperature region until reacting gas is satisfactorily mixed.
CONSTITUTION: Temperature distribution in a quartz reacting pipe of a vapor phase growth device is set in such a manner as demonstrated in the sketch. In short, to be provided on the both sides of a low-temperature region D are a primary high-temperature region C, which has substrate- installed sections's temperature of 730°C and a temperature gradient of 5°C/cm, and a temperature region E, which is similar to the primary high-temperature region. And, at first, the crystal- growth substrate 23 is temporarily transferred to the secondary high-temperature region E, and after the crystsl-growth reacting gas has been satisfactorily mixed, the substrate 23 is moved back to the primary high-temperature region for achievement of crystal growth. It is possible, by repeating this process, to obtain a multi layer crystal growth layer and, besides, this growth is achieved after the reacting gas has been satisfactorily mixed, and therefore, impurity concentration distributions of all the growth layers can be made sharp. This method is best suited for such a purpose as to provided a buffer layer and an acting layer on a semi-insulating GaAs substrate.
COPYRIGHT: (C)1980,JPO&Japio
JP16479978A 1978-12-28 1978-12-28 Vapor phase growth method Granted JPS5591819A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16479978A JPS5591819A (en) 1978-12-28 1978-12-28 Vapor phase growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16479978A JPS5591819A (en) 1978-12-28 1978-12-28 Vapor phase growth method

Publications (2)

Publication Number Publication Date
JPS5591819A true JPS5591819A (en) 1980-07-11
JPS6246975B2 JPS6246975B2 (en) 1987-10-06

Family

ID=15800146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16479978A Granted JPS5591819A (en) 1978-12-28 1978-12-28 Vapor phase growth method

Country Status (1)

Country Link
JP (1) JPS5591819A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5775820U (en) * 1980-10-28 1982-05-11
JPS5776827A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333055A (en) * 1976-09-09 1978-03-28 Fujitsu Ltd Vapor phase growing apparatus of semiconductor crystals
JPS53105371A (en) * 1977-02-25 1978-09-13 Oki Electric Ind Co Ltd Crystal growing method for potassium arsenide

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333055A (en) * 1976-09-09 1978-03-28 Fujitsu Ltd Vapor phase growing apparatus of semiconductor crystals
JPS53105371A (en) * 1977-02-25 1978-09-13 Oki Electric Ind Co Ltd Crystal growing method for potassium arsenide

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5775820U (en) * 1980-10-28 1982-05-11
JPS5776827A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS6246975B2 (en) 1987-10-06

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