JPS5593249A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5593249A JPS5593249A JP64779A JP64779A JPS5593249A JP S5593249 A JPS5593249 A JP S5593249A JP 64779 A JP64779 A JP 64779A JP 64779 A JP64779 A JP 64779A JP S5593249 A JPS5593249 A JP S5593249A
- Authority
- JP
- Japan
- Prior art keywords
- diode
- soldered
- lead
- polarity
- cut
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000008188 pellet Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 238000012797 qualification Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229920002379 silicone rubber Polymers 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
Landscapes
- Die Bonding (AREA)
Abstract
PURPOSE: To obtain high-performance diode stack under extremely short manufacturing process.
CONSTITUTION: Metal plate is press-fabricated to form base part 25a and thin, stepped connecting part 25b. Part 25b shall be able to be easily cut off and of sufficient thickness to provide proper strength during assembly. After nickel-plating the surface, silicon pellet 26 and lead 27 are set with solder on the concave 25c of the base regardless of polarity. Then these parts are soldered in H2 atmosohere, and the edge surface of pellet is cleaned. Following this process, silicon rubber 28 is injected and cured. Along with the identification of diode polarity, diode is selected after determining its qualification. The diode which passes examination is taken out with 25b cut off. The cut section is anticorrosive treated. A diode of identical polarity is soldered 30 on cooling fin 29, and alsos lead 27 and insulative terminal board 31's lead 32 are soldered 33. In this way, the semiconductor apparatus is completed. This manufacturing method enables the availability of high-performance stack making the most of caned diode stack through limited process.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP64779A JPS5593249A (en) | 1979-01-10 | 1979-01-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP64779A JPS5593249A (en) | 1979-01-10 | 1979-01-10 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5593249A true JPS5593249A (en) | 1980-07-15 |
Family
ID=11479490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP64779A Pending JPS5593249A (en) | 1979-01-10 | 1979-01-10 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5593249A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5037362A (en) * | 1973-08-06 | 1975-04-08 | ||
| JPS5177173A (en) * | 1974-12-27 | 1976-07-03 | Tokyo Shibaura Electric Co | Handotaisochino tanshikozo |
-
1979
- 1979-01-10 JP JP64779A patent/JPS5593249A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5037362A (en) * | 1973-08-06 | 1975-04-08 | ||
| JPS5177173A (en) * | 1974-12-27 | 1976-07-03 | Tokyo Shibaura Electric Co | Handotaisochino tanshikozo |
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