JPS5593627A - Cold electron emission cathode - Google Patents

Cold electron emission cathode

Info

Publication number
JPS5593627A
JPS5593627A JP61379A JP61379A JPS5593627A JP S5593627 A JPS5593627 A JP S5593627A JP 61379 A JP61379 A JP 61379A JP 61379 A JP61379 A JP 61379A JP S5593627 A JPS5593627 A JP S5593627A
Authority
JP
Japan
Prior art keywords
type epitaxial
electrons
electron emission
emitted
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61379A
Other languages
Japanese (ja)
Other versions
JPS6057173B2 (en
Inventor
Mitsutaka Takemura
Katsuo Hara
Hideo Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu TV Co Ltd
Original Assignee
Hamamatsu TV Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu TV Co Ltd filed Critical Hamamatsu TV Co Ltd
Priority to JP54000613A priority Critical patent/JPS6057173B2/en
Publication of JPS5593627A publication Critical patent/JPS5593627A/en
Publication of JPS6057173B2 publication Critical patent/JPS6057173B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Cold Cathode And The Manufacture (AREA)

Abstract

PURPOSE: To easily control emitted electron flow at low voltage without consuming power by fabricating the pn-junction with the n- and p-type epitaxial semiconductor layers and using the surface of the p-type epitaxial semiconductor layer as an electron emission surface.
CONSTITUTION: Forward voltage is applied to the pn-junction which consists of the n- and p-type epitaxial semiconductor layers 5 and 6 and electrons are injected into the p-type epitaxial layer 6 from the n-type semiconductor substrate 1. The electrons are emitted in vaccum from the surface 13 and caught by the anode 12. By applying negative potential to the p-type semiconductor layer 4 from the terminal 10, the injected electrons are limited and the number of electrons which are emitted from the surface of the p-type epitaxial semiconductor layer 6 is controlled.
COPYRIGHT: (C)1980,JPO&Japio
JP54000613A 1979-01-10 1979-01-10 cold electron emission cathode Expired JPS6057173B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54000613A JPS6057173B2 (en) 1979-01-10 1979-01-10 cold electron emission cathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54000613A JPS6057173B2 (en) 1979-01-10 1979-01-10 cold electron emission cathode

Publications (2)

Publication Number Publication Date
JPS5593627A true JPS5593627A (en) 1980-07-16
JPS6057173B2 JPS6057173B2 (en) 1985-12-13

Family

ID=11478579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54000613A Expired JPS6057173B2 (en) 1979-01-10 1979-01-10 cold electron emission cathode

Country Status (1)

Country Link
JP (1) JPS6057173B2 (en)

Also Published As

Publication number Publication date
JPS6057173B2 (en) 1985-12-13

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