JPS559406A - Semiconductor displacement transducer - Google Patents
Semiconductor displacement transducerInfo
- Publication number
- JPS559406A JPS559406A JP8099178A JP8099178A JPS559406A JP S559406 A JPS559406 A JP S559406A JP 8099178 A JP8099178 A JP 8099178A JP 8099178 A JP8099178 A JP 8099178A JP S559406 A JPS559406 A JP S559406A
- Authority
- JP
- Japan
- Prior art keywords
- strain
- alloy
- solder
- solder layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
Landscapes
- Pressure Sensors (AREA)
- Die Bonding (AREA)
Abstract
PURPOSE: To increase accuracy of a transducer by restricting the density ratio of Ge not more than 12wt % to Au in an alloy solder that is used to combine a strain detecting body with a strain transfering element, thus maintaining uniform soldering.
CONSTITUTION: A semiconductor strain detecting body 16 has a strain sensing area 13 in the first main surface 12 of a single semiconductor crystal 11 and an insulating layer 15 on the second main surface 14 which is located in the same way as the surface 12. A strain transferring element 17 is made of an elastic metal. A solder layer 18 is made of an alloy. The semiconductor strain detecting body 16 and the strain transfer element 17 are integrated with a laminated body of the solder layer 18 and an intermediate metal layer 19 to constitute a displacement transducer. An Au - Ge alloy is used in the alloy solder layer 18 to enable soldering at low temperature and the range of the density ratio of Ge to Au in the solder is set to be not more than 12wt % in order to maintain uniform soldering. As a result, a uniform solder layer, without allowing precipitation of particles which have highly concentrated Ge, is obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8099178A JPS559406A (en) | 1978-07-05 | 1978-07-05 | Semiconductor displacement transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8099178A JPS559406A (en) | 1978-07-05 | 1978-07-05 | Semiconductor displacement transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS559406A true JPS559406A (en) | 1980-01-23 |
Family
ID=13733960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8099178A Pending JPS559406A (en) | 1978-07-05 | 1978-07-05 | Semiconductor displacement transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS559406A (en) |
-
1978
- 1978-07-05 JP JP8099178A patent/JPS559406A/en active Pending
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