JPS559464A - Production method of bipolar integrated circuit containing i2 l - Google Patents

Production method of bipolar integrated circuit containing i2 l

Info

Publication number
JPS559464A
JPS559464A JP8268378A JP8268378A JPS559464A JP S559464 A JPS559464 A JP S559464A JP 8268378 A JP8268378 A JP 8268378A JP 8268378 A JP8268378 A JP 8268378A JP S559464 A JPS559464 A JP S559464A
Authority
JP
Japan
Prior art keywords
layer
collector
wiring
psg
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8268378A
Other languages
Japanese (ja)
Inventor
Osamu Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8268378A priority Critical patent/JPS559464A/en
Publication of JPS559464A publication Critical patent/JPS559464A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To increase electric current amplification rate by forming the first layer wiring on a collector layer of I<2> L part to be equal to, or smaller than its collector layer area, shortening the intervals of collector layers, and improving the area ratio of the collector layer against the base layer. CONSTITUTION:An n-epi layer 23 on a p<->type Si base plate 21 is surrounded by an n<+> planted layer 22 and a p<+> separating layer. Within this island are made a p<-> base layer 25, n<+> connecting layer 26, an outside base layer 27. A proliferation window, formed on SiO2 28, is covered with PSG 30, performing P proliferation to make a collector layer 31 and an emitter layer 32. An opening smaller than the proliferation window is formed to PSG on the layers 31, 32, high density poly-Si is layed by CVD method, and the first wiring layer 34 between the layers 31-32 are selectively formed. Next, PSG 35 is layed, selectively opened, attached with Al through vaporization for selectively corrosive carving to compose an earth 37, an injector 38, an input part 39 as the second wiring layer. This structure improves the property of I<2> L device of dual layer wiring structure.
JP8268378A 1978-07-07 1978-07-07 Production method of bipolar integrated circuit containing i2 l Pending JPS559464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8268378A JPS559464A (en) 1978-07-07 1978-07-07 Production method of bipolar integrated circuit containing i2 l

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8268378A JPS559464A (en) 1978-07-07 1978-07-07 Production method of bipolar integrated circuit containing i2 l

Publications (1)

Publication Number Publication Date
JPS559464A true JPS559464A (en) 1980-01-23

Family

ID=13781213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8268378A Pending JPS559464A (en) 1978-07-07 1978-07-07 Production method of bipolar integrated circuit containing i2 l

Country Status (1)

Country Link
JP (1) JPS559464A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206072A (en) * 1991-06-27 1993-08-13 Applied Materials Inc Plasma processing apparatus and method using inductive RF coupling
US5880037A (en) * 1992-09-08 1999-03-09 Applied Materials, Inc. Oxide etch process using a mixture of a fluorine-substituted hydrocarbon and acetylene that provides high selectivity to nitride and is suitable for use on surfaces of uneven topography
US6251792B1 (en) 1990-07-31 2001-06-26 Applied Materials, Inc. Plasma etch processes
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US6440866B1 (en) 1991-06-27 2002-08-27 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6444085B1 (en) 1991-06-27 2002-09-03 Applied Materials Inc. Inductively coupled RF plasma reactor having an antenna adjacent a window electrode
US6444137B1 (en) 1990-07-31 2002-09-03 Applied Materials, Inc. Method for processing substrates using gaseous silicon scavenger
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6518195B1 (en) 1991-06-27 2003-02-11 Applied Materials, Inc. Plasma reactor using inductive RF coupling, and processes
US6623596B1 (en) 1992-12-01 2003-09-23 Applied Materials, Inc Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
EP1646084A1 (en) 2004-10-06 2006-04-12 Infineon Technologies AG A method in the fabrication of an integrated injection logic circuit

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6251792B1 (en) 1990-07-31 2001-06-26 Applied Materials, Inc. Plasma etch processes
US6444137B1 (en) 1990-07-31 2002-09-03 Applied Materials, Inc. Method for processing substrates using gaseous silicon scavenger
JPH05206072A (en) * 1991-06-27 1993-08-13 Applied Materials Inc Plasma processing apparatus and method using inductive RF coupling
US6440866B1 (en) 1991-06-27 2002-08-27 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6444085B1 (en) 1991-06-27 2002-09-03 Applied Materials Inc. Inductively coupled RF plasma reactor having an antenna adjacent a window electrode
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6518195B1 (en) 1991-06-27 2003-02-11 Applied Materials, Inc. Plasma reactor using inductive RF coupling, and processes
US5880037A (en) * 1992-09-08 1999-03-09 Applied Materials, Inc. Oxide etch process using a mixture of a fluorine-substituted hydrocarbon and acetylene that provides high selectivity to nitride and is suitable for use on surfaces of uneven topography
US6623596B1 (en) 1992-12-01 2003-09-23 Applied Materials, Inc Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
EP1646084A1 (en) 2004-10-06 2006-04-12 Infineon Technologies AG A method in the fabrication of an integrated injection logic circuit
US7456069B2 (en) 2004-10-06 2008-11-25 Infineon Technologies Ag Method in the fabrication of an integrated injection logic circuit

Similar Documents

Publication Publication Date Title
JPS5780739A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5669844A (en) Manufacture of semiconductor device
JPS56162875A (en) Semiconductor device
JPS5389374A (en) Production of semiconductor device
JPS52185A (en) Semiconductor
JPS5758338A (en) Semiconductor integrated device
JPS545392A (en) Semiconductor integrated circuit and its manufacture
JPS52109883A (en) Manufacture of silicon semiconductor device
JPS5410688A (en) Production of semiconductor device
JPS5561056A (en) High resistance structure of integrated circuit
JPS52129385A (en) Productoon of bipolar integrated circuit device
JPS5447493A (en) Semiconductor integrated circuit device and production of the same
JPS57169263A (en) Semiconductor device
JPS5698856A (en) Semiconductor resistance device
JPS53126270A (en) Production of semiconductor devices
JPS5376752A (en) Production of semionductor device
JPS6421969A (en) Vertical type mosfet device and manufacture thereof
JPS5556644A (en) Manufacture of semiconductor integrated circuit
JPS5522882A (en) Semiconductor device
JPS5297679A (en) Semiconductor rectifying element
JPS6421968A (en) Vertical type mosfet device and manufacture thereof
JPS57103347A (en) Manufacture of integrated circuit
JPS5752164A (en) Composite transistor
JPS5478978A (en) Semiconductor device
JPS5368990A (en) Production of semiconductor integrated circuit