JPS5797626A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5797626A
JPS5797626A JP55174009A JP17400980A JPS5797626A JP S5797626 A JPS5797626 A JP S5797626A JP 55174009 A JP55174009 A JP 55174009A JP 17400980 A JP17400980 A JP 17400980A JP S5797626 A JPS5797626 A JP S5797626A
Authority
JP
Japan
Prior art keywords
pattern
grooves
film
semiconductor device
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55174009A
Other languages
Japanese (ja)
Inventor
Isamu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP55174009A priority Critical patent/JPS5797626A/en
Publication of JPS5797626A publication Critical patent/JPS5797626A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a distinct pattern of a semiconductor device by a method wherein after grooves for evacuation of gas are formed on the scribing region of a semiconductor substrate, the photolithography process is performed. CONSTITUTION:After a photo resist film 2' is formed on the semiconductor substrate 1, baking treatment is performed thereto, and after a photo mask 5 for formation of scribe lines is arranged thereon, exposure and development treatment are performed to form a pattern. Then etching treatment is performed to form the grooves 6. Then by performing the photolithography process, the desired pattern is formed. Accordingly because remaining gas between the mask 5 and the film 2' is evacuated through the grooves 6, adhesion between the film 2 and the photo mask 3 is unified, and definition of the pattern to be obtained by later exposure and development treatment is enhanced.
JP55174009A 1980-12-09 1980-12-09 Manufacture of semiconductor device Pending JPS5797626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55174009A JPS5797626A (en) 1980-12-09 1980-12-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55174009A JPS5797626A (en) 1980-12-09 1980-12-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5797626A true JPS5797626A (en) 1982-06-17

Family

ID=15971041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55174009A Pending JPS5797626A (en) 1980-12-09 1980-12-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5797626A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9367151B2 (en) 2005-12-30 2016-06-14 Apple Inc. Touch pad with symbols based on mode
US9654104B2 (en) 2007-07-17 2017-05-16 Apple Inc. Resistive force sensor with capacitive discrimination
US9977518B2 (en) 2001-10-22 2018-05-22 Apple Inc. Scrolling based on rotational movement
US10180732B2 (en) 2006-10-11 2019-01-15 Apple Inc. Gimballed scroll wheel
US10353565B2 (en) 2002-02-25 2019-07-16 Apple Inc. Input apparatus and button arrangement for handheld device
US10359813B2 (en) 2006-07-06 2019-07-23 Apple Inc. Capacitance sensing electrode with integrated I/O mechanism
US10866718B2 (en) 2007-09-04 2020-12-15 Apple Inc. Scrolling techniques for user interfaces
US20230282502A1 (en) * 2022-03-03 2023-09-07 Micron Technology, Inc. Wafer carrier with reticle template for marking reticle fields on a semiconductor wafer

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9977518B2 (en) 2001-10-22 2018-05-22 Apple Inc. Scrolling based on rotational movement
US10353565B2 (en) 2002-02-25 2019-07-16 Apple Inc. Input apparatus and button arrangement for handheld device
US9367151B2 (en) 2005-12-30 2016-06-14 Apple Inc. Touch pad with symbols based on mode
US10359813B2 (en) 2006-07-06 2019-07-23 Apple Inc. Capacitance sensing electrode with integrated I/O mechanism
US10890953B2 (en) 2006-07-06 2021-01-12 Apple Inc. Capacitance sensing electrode with integrated I/O mechanism
US10180732B2 (en) 2006-10-11 2019-01-15 Apple Inc. Gimballed scroll wheel
US9654104B2 (en) 2007-07-17 2017-05-16 Apple Inc. Resistive force sensor with capacitive discrimination
US10866718B2 (en) 2007-09-04 2020-12-15 Apple Inc. Scrolling techniques for user interfaces
US12159028B2 (en) 2007-09-04 2024-12-03 Apple Inc. Scrolling techniques for user interfaces
US20230282502A1 (en) * 2022-03-03 2023-09-07 Micron Technology, Inc. Wafer carrier with reticle template for marking reticle fields on a semiconductor wafer
US12183609B2 (en) * 2022-03-03 2024-12-31 Micron Technology, Inc. Wafer carrier with reticle template for marking reticle fields on a semiconductor wafer

Similar Documents

Publication Publication Date Title
JPS5633827A (en) Photo etching method including surface treatment of substrate
JPS5567141A (en) Method for manufacturing semiconductor device
JPS57130431A (en) Manufacture of semiconductor device
JPS5494881A (en) Exposure method
JPS5772333A (en) Manufacture of semiconductor device
JPS5680130A (en) Manufacture of semiconductor device
JPS55138839A (en) Method of fabricating semiconductor device
JPS5339060A (en) Lot number marking method to wafers
JPS5588057A (en) Production of photo mask
JPS5527656A (en) Method and device of sticking photomask and wafer together
JPS5637629A (en) Formation of thin film pattern
JPS5743425A (en) Forming method for fine pattern
JPS6473718A (en) Manufacture of semiconductor integrated circuit device
JPS535578A (en) Manufacture of semiconductor device
JPS5796547A (en) Manufacture of semiconductor device
JPS5633826A (en) Manufacture of target
JPS5522833A (en) Manufacturing of semiconductor device
JPS5555531A (en) Method of manufacturing semiconductor integrated circuit
KR960008498B1 (en) Sensitive film pattern forming method
JPS56153736A (en) Manufacture of semiconductor device
JPS5516466A (en) Photoetching method
JPS5475275A (en) Manufacture of semiconductor device
JPS56108880A (en) Selectively etching method for silicon oxide film
JPS5459873A (en) Production of semiconductor device
JPS57173943A (en) Manufacture of photo mask