JPS5595320A - Cvd device - Google Patents

Cvd device

Info

Publication number
JPS5595320A
JPS5595320A JP317579A JP317579A JPS5595320A JP S5595320 A JPS5595320 A JP S5595320A JP 317579 A JP317579 A JP 317579A JP 317579 A JP317579 A JP 317579A JP S5595320 A JPS5595320 A JP S5595320A
Authority
JP
Japan
Prior art keywords
wafer
suscepter
holder
fluttering
flake
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP317579A
Other languages
Japanese (ja)
Inventor
Toshiyuki Tashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP317579A priority Critical patent/JPS5595320A/en
Publication of JPS5595320A publication Critical patent/JPS5595320A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain a homogeneous and stable film on a wafer by a construction wherein the wafer is loaded on the holder whose diameter is smaller than that of wafer for reducing the effect of fluttering of flake from the suscepter's. CONSTITUTION:A circular holder 12 which is a little smaller in diameter than wafer 12 is furnished on the suscepter 2. Each holder is made of material that has large heat capacity and loaded with wafer or dummy to protect the surface. By this construction of the CVD device, the fluttering flake from suscepter 2 is reduced very much and moreover the good temperature pattern is obtained because of freedom from foreign material at the contact between wafer and holder 12. Futhermore less frequent suscepter cleaning is to be required because of less interference to wafer of suscepter's flakes. By this necessary and simple maintenance, the wafer of high quality and high yield is obtained.
JP317579A 1979-01-12 1979-01-12 Cvd device Pending JPS5595320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP317579A JPS5595320A (en) 1979-01-12 1979-01-12 Cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP317579A JPS5595320A (en) 1979-01-12 1979-01-12 Cvd device

Publications (1)

Publication Number Publication Date
JPS5595320A true JPS5595320A (en) 1980-07-19

Family

ID=11550042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP317579A Pending JPS5595320A (en) 1979-01-12 1979-01-12 Cvd device

Country Status (1)

Country Link
JP (1) JPS5595320A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200434A (en) * 1983-04-28 1984-11-13 Hitachi Electronics Eng Co Ltd Detachable mechanism of sample base of cvd device
US5242501A (en) * 1982-09-10 1993-09-07 Lam Research Corporation Susceptor in chemical vapor deposition reactors
JP2020198420A (en) * 2019-05-28 2020-12-10 信越半導体株式会社 Manufacturing method for epitaxial wafer and susceptor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5242501A (en) * 1982-09-10 1993-09-07 Lam Research Corporation Susceptor in chemical vapor deposition reactors
JPS59200434A (en) * 1983-04-28 1984-11-13 Hitachi Electronics Eng Co Ltd Detachable mechanism of sample base of cvd device
JP2020198420A (en) * 2019-05-28 2020-12-10 信越半導体株式会社 Manufacturing method for epitaxial wafer and susceptor

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