JPS59200434A - Detachable mechanism of sample base of cvd device - Google Patents
Detachable mechanism of sample base of cvd deviceInfo
- Publication number
- JPS59200434A JPS59200434A JP58074083A JP7408383A JPS59200434A JP S59200434 A JPS59200434 A JP S59200434A JP 58074083 A JP58074083 A JP 58074083A JP 7408383 A JP7408383 A JP 7408383A JP S59200434 A JPS59200434 A JP S59200434A
- Authority
- JP
- Japan
- Prior art keywords
- stage
- arm
- sample base
- sample
- cvd apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3306—Horizontal transfer of a single workpiece
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3308—Vertical transfer of a single workpiece
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はCVD装置の試料台を、人手で直接扱うことな
く、自動的に取りつけ取り外し出来るようにした機構に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a mechanism that allows a sample stage of a CVD apparatus to be automatically attached and removed without manual handling.
CVD装置の試料を載置する試料台は、頻繁に洗浄を行
う必要がある。その為、従来は、作業者の手作業で、試
料台の交換、洗浄を行っていたが、下記のような問題が
生じていた。即ち、試料台の交換に際しては、安全の為
、C’VD反応炉内温度(500℃)を一旦常温付近に
まで下げて行わねばならず、多大の時間を要する、手作
業による交換の為、粗雑な扱いにより試料台を傷つけた
り、設置誤りをしがちである、ウェハ(試料)の大口径
化に伴い試料台の重量が増加するため、作業自体に危険
が増加するなどの問題である。A sample stage on which a sample is placed in a CVD apparatus needs to be cleaned frequently. For this reason, in the past, the sample stage had to be replaced and cleaned manually by an operator, but this resulted in the following problems. That is, when replacing the sample stage, for safety reasons, the temperature inside the C'VD reactor (500°C) must be lowered to around room temperature, and this requires a lot of time and manual replacement. These problems include the tendency for the sample stage to be damaged or misplaced due to rough handling, and the increased weight of the sample stage as the diameter of the wafer (sample) increases, making the work itself more dangerous.
本発明の目的は、上記従来の如き問題のない、作業者は
単に例えば操作ボタンを押すだけで、CVD装置の試料
台の取りつけ取り外しが自動的に出来るようにした機構
を提供することにある。An object of the present invention is to provide a mechanism that does not have the above-mentioned conventional problems and allows an operator to automatically attach and detach a sample stage of a CVD apparatus by simply pressing an operation button, for example.
上記目的を達成するために本発明においては、CVD装
置の試料台に対し、CVD装置の外部に設けた駆動部に
駆動されて、CVD装置側壁を越える往復動とCVD装
置上下方向の往復動とが可能な腕と、この腕の先端に設
けた、試料台をつかみ又は放す手段とが、CVD装置の
試料台停止位置に対応、連動して、試料台をつかんで持
ち上げ、CVD装置外部の試料台置き場(ステージ)の
上に移動させ、この位置で下降して試料台をステージに
置いて放す、又はその逆に、CVD装置外部のステージ
に置いた試料台をつかんで持ち上げ、CVD装置内の試
料台ステージの上に移動させ、この位置で下降してCV
D装置内ステージに置いて放す動作を、順次自動的に行
えるような機構を設けた。In order to achieve the above object, in the present invention, the sample stage of the CVD apparatus is driven by a drive unit provided outside the CVD apparatus, and is capable of reciprocating movement over the side wall of the CVD apparatus and reciprocating movement in the vertical direction of the CVD apparatus. An arm that can hold and lift the sample stand and a means for grasping or releasing the sample stand provided at the tip of this arm correspond to and interlock with the sample stand stop position of the CVD apparatus, grip and lift the sample stand, and release the sample outside the CVD apparatus. Move the sample stand onto the stage, lower it from this position, place the sample stand on the stage, and release it, or conversely, grab the sample stand placed on the stage outside the CVD apparatus and lift it up. Move the sample table onto the stage and lower it at this position to perform CV
A mechanism was provided to automatically sequentially place and release the objects on the stage in the D device.
〔発明の実施例〕
本発明の一実施例を第1図に示す。図中、1は’CV
D反応炉(内部)、2は反応炉側壁、3は試料台、4は
腕、5は試料台をつかみ又は放すチャックヘッド、6は
駆動部、7は取りつけボタン、8は取り外しボタン、9
は反応炉外部に設けた試料台冷却用ステージ、10は腕
4が取りつけられた上下方向往復動可能な回転軸である
。なお、図示してないが、CVD反応炉1内の周辺に沿
って、試料台3をのせて自転しつつ公転する多数のステ
ージが設けられている。[Embodiment of the Invention] An embodiment of the present invention is shown in FIG. In the figure, 1 is 'CV
D reactor (inside), 2 is the reactor side wall, 3 is the sample stage, 4 is the arm, 5 is the chuck head that grips or releases the sample stage, 6 is the drive unit, 7 is the attachment button, 8 is the removal button, 9
10 is a stage for cooling the sample table provided outside the reactor, and 10 is a rotating shaft to which an arm 4 is attached and is capable of vertically reciprocating movement. Although not shown, a large number of stages are provided along the periphery of the CVD reactor 1 on which the sample stage 3 is placed and rotates around its axis.
作業者が取り外しボタン8を押すと、腕4が回転軸10
により回転されて腕の先端に設けたチャンクヘッド5が
CVD反応炉内の一つのステージ即ち一つの試料台3の
真上に来る、ここで腕4は回転軸により下降させられて
チャックヘッド5がステージ上の試料台3をつかむ(こ
の例では真空チャンクが吸いつける)、次いで腕4は上
昇し、回転してチャックヘッド5がCVD装置反応炉外
の冷却用ステージ9の真上に来たところで回転運動は止
まり、この位置で腕4は下降し、試料台3が冷却用ステ
ージ9に丁度のったところでチャックヘッド5は試料台
3を放す。冷却用ステージ9に載せられた試料台3は冷
却されて後の取扱は容易になる。試料台が十分冷えた後
、作業者が手動で或いは別機構により自動で、本機構外
へ取り出す。同時に反応炉内の次ぎの試料台が1インデ
ツクスだけ移動して取り外し待機状態となる。When the operator presses the removal button 8, the arm 4 moves to the rotation axis 10.
The arm 4 is rotated by the rotary shaft so that the chuck head 5 installed at the tip of the arm is directly above one stage, that is, one sample stage 3 in the CVD reactor. Grasp the sample stage 3 on the stage (in this example, the vacuum chunk sucks it), then the arm 4 rises and rotates until the chuck head 5 is directly above the cooling stage 9 outside the CVD apparatus reactor. The rotational movement stops, the arm 4 descends at this position, and the chuck head 5 releases the sample stage 3 when the sample stage 3 is just placed on the cooling stage 9. The sample stage 3 placed on the cooling stage 9 is cooled and can be easily handled later. After the sample stage has sufficiently cooled down, it is taken out of the main mechanism either manually by an operator or automatically by a separate mechanism. At the same time, the next sample stage in the reactor moves by one index and becomes ready for removal.
試料台取りつけ時も同様に、作業者あるいは自動機構に
よりステージ9上に載置された試料台3は、取りつけボ
タン7を押すことにより、CVD装置反応炉1の内部周
辺の取りつけ待機位置で待機していた一つのステージの
上に置かれてチャックヘッド5から放される。、その後
、反応炉1内部周辺のステージ群は1インデツクスだけ
公転移動して次ぎのステージが待機状態となる。Similarly, when mounting the sample stage, the sample stage 3 placed on the stage 9 by an operator or an automatic mechanism is placed on standby at the mounting standby position around the inside of the CVD apparatus reactor 1 by pressing the mounting button 7. The chuck head 5 is then placed on a single stage that has been previously used and released from the chuck head 5. After that, the stage group around the inside of the reactor 1 revolves by one index, and the next stage becomes in a standby state.
なお図示してないが、自動ウェハ搬送機構等やこより、
試料台の自転位相が必要なときは、ステージ上、及び試
料台裏面に、それぞれ、位相の符牒となる突起および凹
みを設ければよい。Although not shown, automatic wafer transport mechanisms, etc.
When the rotational phase of the sample stage is required, protrusions and depressions that indicate the phase may be provided on the stage and on the back surface of the sample stage, respectively.
以上説明したように本発明によれば、CVD装置の試料
台の取りつけ取り外しが極めて容易となり、従来12時
間毎に3時間程度必要とした試料台交換の為の時間が3
0分程度に短縮され、がっ、安全性、作業性が高められ
る。As explained above, according to the present invention, it is extremely easy to attach and remove the sample stage of a CVD apparatus, and the time required to replace the sample stage, which conventionally required about 3 hours every 12 hours, can be reduced to 3 hours.
The time is reduced to approximately 0 minutes, greatly improving safety and workability.
なお、本発明はプラズマCVD装置、エピタキシャル成
長装置、ドライエツチング装置、その他バッチ式で試料
台交換の必要な装置全般に応用できる。The present invention can be applied to plasma CVD apparatuses, epitaxial growth apparatuses, dry etching apparatuses, and other batch-type apparatuses in general that require sample stage exchange.
第1図は本発明一実施例の斜視図である。
1・−CVD装置反応炉(内部) 、2−反応炉側壁、
3・−試料台、4・−・腕、5・−チャックヘッド、6
−駆動部、7−取りつけボタン、8−取り外しボタン、
9−冷却用ステージ、1〇−回転軸。
代理人 弁理士 縣 武雄FIG. 1 is a perspective view of one embodiment of the present invention. 1-CVD equipment reactor (inside), 2-reactor side wall,
3.--Sample stage, 4.--Arm, 5.--Chuck head, 6.
- drive unit, 7 - attachment button, 8 - removal button,
9-cooling stage, 10-rotation axis. Agent Patent Attorney Takeo Agata
Claims (1)
駆動部に駆動されて、CVD装置側壁を越える往復動と
CVD装置上下方向の往復動とが可能な腕と、この腕の
先端に設けた、試料台をつかみ又は放す手段とが、CV
D装置の試料台停止位置に対応、連動して、試料台をつ
かんで持ち上げ、CVD装置外部の試料台置き場の上に
移動させ、この位置で下降して試料台を置き場に置いて
放す、又はその逆に、CVD装置外部の置き場に置いた
試料台をつかんで持ち上げ、CVD装置内の試料台置き
場の上に移動させ、この位置で下降してCVD装置内置
き場に置いて放す動作を、順次自動的に行うようにした
ことを特徴とするCVD装置の試料台の取りつけ取り外
し機構。For the sample stage of the CVD apparatus, there is an arm that is driven by a drive unit provided outside the CVD apparatus and is capable of reciprocating movement over the side wall of the CVD apparatus and reciprocating movement in the vertical direction of the CVD apparatus, and an arm provided at the tip of this arm. In addition, the means for grasping or releasing the sample stage is CV
Corresponding to and interlocking with the sample stand stop position of the D device, grab and lift the sample stand, move it to the sample stand storage place outside the CVD equipment, lower it at this position, place the sample stand in the place, and release it, or Conversely, the following steps are performed: grasp and lift the sample stand placed in a storage area outside the CVD apparatus, move it to the sample stand storage area inside the CVD apparatus, lower it from this position, place it in the storage area inside the CVD apparatus, and release it. A mechanism for attaching and detaching a sample stage of a CVD apparatus, characterized in that the attachment and detachment are automatically performed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58074083A JPS59200434A (en) | 1983-04-28 | 1983-04-28 | Detachable mechanism of sample base of cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58074083A JPS59200434A (en) | 1983-04-28 | 1983-04-28 | Detachable mechanism of sample base of cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59200434A true JPS59200434A (en) | 1984-11-13 |
Family
ID=13536919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58074083A Pending JPS59200434A (en) | 1983-04-28 | 1983-04-28 | Detachable mechanism of sample base of cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59200434A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50145077A (en) * | 1974-05-10 | 1975-11-21 | ||
| JPS5595320A (en) * | 1979-01-12 | 1980-07-19 | Mitsubishi Electric Corp | Cvd device |
-
1983
- 1983-04-28 JP JP58074083A patent/JPS59200434A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50145077A (en) * | 1974-05-10 | 1975-11-21 | ||
| JPS5595320A (en) * | 1979-01-12 | 1980-07-19 | Mitsubishi Electric Corp | Cvd device |
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