JPS5595351A - Semiconductor cooling device - Google Patents

Semiconductor cooling device

Info

Publication number
JPS5595351A
JPS5595351A JP228579A JP228579A JPS5595351A JP S5595351 A JPS5595351 A JP S5595351A JP 228579 A JP228579 A JP 228579A JP 228579 A JP228579 A JP 228579A JP S5595351 A JPS5595351 A JP S5595351A
Authority
JP
Japan
Prior art keywords
fin
sinter
aln
good heat
cooling device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP228579A
Other languages
Japanese (ja)
Inventor
Kenji Kijima
Yoji Takamaru
Takao Oota
Akihiko Tsuge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP228579A priority Critical patent/JPS5595351A/en
Publication of JPS5595351A publication Critical patent/JPS5595351A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE: To solve problems arising when a fin is made a conductor by insulating a fin and an element by means of an AlN sinter.
CONSTITUTION: An AlN sinter is formed by a hot press or normal press sintering operation, and its relative density is made 98% or above. A material containing 1W 6wt% of O2 is used for this. This sinter 4 is placed between cooling fin 5 and element 1, and these are pressed together via terminal 2 and seat 3. AlN is a good heat conductor. The surface of contact may be coated with a compound of good heat transfer characteristic and welded by pressure or by means of brazing. In this way, by improving the cooling efficiency, the fin and the element can be insulated. As a result, even if the fin is exposed to the atmosphere, there is no deterioration in insulation and it is safe.
COPYRIGHT: (C)1980,JPO&Japio
JP228579A 1979-01-16 1979-01-16 Semiconductor cooling device Pending JPS5595351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP228579A JPS5595351A (en) 1979-01-16 1979-01-16 Semiconductor cooling device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP228579A JPS5595351A (en) 1979-01-16 1979-01-16 Semiconductor cooling device

Publications (1)

Publication Number Publication Date
JPS5595351A true JPS5595351A (en) 1980-07-19

Family

ID=11525091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP228579A Pending JPS5595351A (en) 1979-01-16 1979-01-16 Semiconductor cooling device

Country Status (1)

Country Link
JP (1) JPS5595351A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60183753A (en) * 1984-02-29 1985-09-19 ザ　バ−グクイスト　カンパニ− Seat plate for mounting solid state electronic device
JPH0794645A (en) * 1994-09-07 1995-04-07 Toshiba Corp Semiconductor device
JPH08111483A (en) * 1994-10-07 1996-04-30 Mitsubishi Electric Corp Semiconductor cooling device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60183753A (en) * 1984-02-29 1985-09-19 ザ　バ−グクイスト　カンパニ− Seat plate for mounting solid state electronic device
JPH0794645A (en) * 1994-09-07 1995-04-07 Toshiba Corp Semiconductor device
JPH08111483A (en) * 1994-10-07 1996-04-30 Mitsubishi Electric Corp Semiconductor cooling device

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