JPS5595700A - Vapor phase growing jig - Google Patents

Vapor phase growing jig

Info

Publication number
JPS5595700A
JPS5595700A JP324979A JP324979A JPS5595700A JP S5595700 A JPS5595700 A JP S5595700A JP 324979 A JP324979 A JP 324979A JP 324979 A JP324979 A JP 324979A JP S5595700 A JPS5595700 A JP S5595700A
Authority
JP
Japan
Prior art keywords
jig
wafer
vapor phase
mirror
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP324979A
Other languages
Japanese (ja)
Inventor
Masahiro Kamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP324979A priority Critical patent/JPS5595700A/en
Publication of JPS5595700A publication Critical patent/JPS5595700A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To provide a jig for mounting a substrate for vapor phase growth by mirror-finishing the surface of a support and converting the mirror surface into a homogeneous rough surface with little external waviness.
CONSTITUTION: A flat plate support (spacer) made of silicon carbide is mirror- worked and surface-reworked by sand blast with abrasive grains of No. about 1000W1500 to obtain jig 8 for mounting a wafer (substrate for vapor phase growth). Jig 8 has a wafer contact surface converted into a homogeneous rough surface with no external waviness. Jig 8 is set in the recess of susceptor 2 covered with silicon carbide 3, and wafer 1 is mounted on jig 8 to carry out epitaxial growth. By forming recessed portion 9 smaller than spacer 8 in diameter in spot facing part 4 of susceptor 2, the internal temp. distribution of wafer 1 is made uniform to minimize a curve of wafer 1.
COPYRIGHT: (C)1980,JPO&Japio
JP324979A 1979-01-11 1979-01-11 Vapor phase growing jig Pending JPS5595700A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP324979A JPS5595700A (en) 1979-01-11 1979-01-11 Vapor phase growing jig

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP324979A JPS5595700A (en) 1979-01-11 1979-01-11 Vapor phase growing jig

Publications (1)

Publication Number Publication Date
JPS5595700A true JPS5595700A (en) 1980-07-21

Family

ID=11552179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP324979A Pending JPS5595700A (en) 1979-01-11 1979-01-11 Vapor phase growing jig

Country Status (1)

Country Link
JP (1) JPS5595700A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57203545U (en) * 1981-06-19 1982-12-24
JPS59169999A (en) * 1983-03-17 1984-09-26 Matsushita Electric Ind Co Ltd Gaseous phase growth of epitaxial growth
JPH02255593A (en) * 1989-03-28 1990-10-16 Denki Kagaku Kogyo Kk Graphite susceptor for plasma cvd
JP2007273660A (en) * 2006-03-31 2007-10-18 Taiyo Nippon Sanso Corp Vapor growth equipment

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57203545U (en) * 1981-06-19 1982-12-24
JPS59169999A (en) * 1983-03-17 1984-09-26 Matsushita Electric Ind Co Ltd Gaseous phase growth of epitaxial growth
JPH02255593A (en) * 1989-03-28 1990-10-16 Denki Kagaku Kogyo Kk Graphite susceptor for plasma cvd
JP2007273660A (en) * 2006-03-31 2007-10-18 Taiyo Nippon Sanso Corp Vapor growth equipment

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