JPS57149727A - Heating base of a vapor growth semiconductor - Google Patents

Heating base of a vapor growth semiconductor

Info

Publication number
JPS57149727A
JPS57149727A JP3485381A JP3485381A JPS57149727A JP S57149727 A JPS57149727 A JP S57149727A JP 3485381 A JP3485381 A JP 3485381A JP 3485381 A JP3485381 A JP 3485381A JP S57149727 A JPS57149727 A JP S57149727A
Authority
JP
Japan
Prior art keywords
wafer
vapor growth
concave part
heating base
fringe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3485381A
Other languages
Japanese (ja)
Inventor
Masanori Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3485381A priority Critical patent/JPS57149727A/en
Publication of JPS57149727A publication Critical patent/JPS57149727A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To prevent the warp of a semicondutor wafer on vapor growth by forming a sink on the floor center and the floor region except for the fringe of a heating base. CONSTITUTION:A concave part 11 is formed on a plate substrate 10 with the sink 11c set on a region except for parts 11a, 11b so that the floor center 11a and the fringe 11b of the concave part 11 touch the lower surface of a semicinductor wafer. The substrate 10 is formed of carbon with the surface covered with SiC. When the wafer is inserted into the concave part 11 of the base 12 of this structure for vapor growth, heat is evenly transmitted from the whole lower surface of the wafer to increase and decrease the temperature constantly. Therefore, the wafer gets no difference in temperature to reduce the influence by thermal stress for the prevention of the warp. Thus, the occurrence of crystal defect slip is prevented to provide a vapor growth layer of high quality for the improvement of the yield of a wafer.
JP3485381A 1981-03-11 1981-03-11 Heating base of a vapor growth semiconductor Pending JPS57149727A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3485381A JPS57149727A (en) 1981-03-11 1981-03-11 Heating base of a vapor growth semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3485381A JPS57149727A (en) 1981-03-11 1981-03-11 Heating base of a vapor growth semiconductor

Publications (1)

Publication Number Publication Date
JPS57149727A true JPS57149727A (en) 1982-09-16

Family

ID=12425729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3485381A Pending JPS57149727A (en) 1981-03-11 1981-03-11 Heating base of a vapor growth semiconductor

Country Status (1)

Country Link
JP (1) JPS57149727A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116229U (en) * 1984-01-10 1985-08-06 日本電気株式会社 Heat generating carrier for semiconductor wafer
FR2641901A1 (en) * 1989-01-13 1990-07-20 Toshiba Ceramics Co SUSCEPTOR FOR USE IN A VERTICAL DEVICE FOR REALIZING VAPOR PHASE GROWTH

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116229U (en) * 1984-01-10 1985-08-06 日本電気株式会社 Heat generating carrier for semiconductor wafer
FR2641901A1 (en) * 1989-01-13 1990-07-20 Toshiba Ceramics Co SUSCEPTOR FOR USE IN A VERTICAL DEVICE FOR REALIZING VAPOR PHASE GROWTH

Similar Documents

Publication Publication Date Title
US5242501A (en) Susceptor in chemical vapor deposition reactors
US4113547A (en) Formation of epitaxial layers on substrate wafers utilizing an inert heat radiation ring to promote uniform heating
ES2163263T3 (en) SUSCEPTOR DESIGNS FOR SLIM SILICON CARBIDE FILMS.
EP0442304A3 (en) Polycrystalline cvd diamond substrate for single crystal epitaxial growth of semiconductors
GB1425965A (en) Method of treating monocrystalline wafers
ZA905696B (en) Apparatus for synthetic diamond deposition including curved filaments and substrate cooling means
JPS57149727A (en) Heating base of a vapor growth semiconductor
ATE50886T1 (en) CARRIER DISC FOR SEMICONDUCTOR ARRANGEMENT MADE OF SILICON CARBIDE.
JPH045000B2 (en)
GB1115508A (en) Improvements in or relating to the expitaxial deposition of semiconductor material
JPS5654033A (en) Heater for substrate and chemical evaporation using said heater
JPH07245264A (en) Vapor phase growth equipment
JPS5271171A (en) Production of epitaxial wafer
JPS57153445A (en) Sos semiconductor substrate
JPS5932123A (en) Vapor growth method
GB1075555A (en) Process for the formation of a layer of a semiconductor material on a crystalline base
JPS55121649A (en) Cvd device
JPS5950095A (en) Chemical reactor
JPS53146299A (en) Production of silicon carbide substrate
JPH0521871Y2 (en)
JPS6490518A (en) Formation of gaas epitaxial layer
JPH01283813A (en) Epitaxial growth device
JPS5595700A (en) Vapor phase growing jig
JPS6489318A (en) Vapor growth susceptor
JPS645012A (en) Vapor growth equipment