JPS56105652A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56105652A
JPS56105652A JP897780A JP897780A JPS56105652A JP S56105652 A JPS56105652 A JP S56105652A JP 897780 A JP897780 A JP 897780A JP 897780 A JP897780 A JP 897780A JP S56105652 A JPS56105652 A JP S56105652A
Authority
JP
Japan
Prior art keywords
film
high temperature
layer
reaction
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP897780A
Other languages
Japanese (ja)
Inventor
Masahiko Denda
Shinichi Sato
Kazuo Ito
Natsuo Tsubouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP897780A priority Critical patent/JPS56105652A/en
Publication of JPS56105652A publication Critical patent/JPS56105652A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1908—Preparing SOI wafers using silicon implanted buried insulating layers, e.g. oxide layers [SIMOX]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To separate elements from other elements in high precision without an appearance of defects by selectively injecting to a substrate the impurity ions which form an insulator under the reaction to Si at high temperature and treating the same at high temperature in an inactive gas. CONSTITUTION:An n type Si is applied with a resist mask 7 to form an O<+>-ion injected layer 8. The resist film can be formed easier and in higher precision than Si3N4. Removal and treatment of the mask by O2 plasma at high temperature in N2 bring the O<+>-ions in the reaction to Si to form an oxidized film 9, a lateral reaction by the external atmosphere not taking place, a strain seldom appearing except in the separated layer and no crystal defect being produced. According to conditions of the O-ion injection and of the heat treatment, the oxidized film 9 of Si2O3 and the like containing O in a low ratio after than SiO2 is produced as well. A p layer 4 is formed as the mask of the film 9 and a poly-Si electrode 6a is formed which extends over a part of the surface of SiO25 and the film 9. With this construction, the elements separated layer can easily be formed in high precision.
JP897780A 1980-01-28 1980-01-28 Manufacture of semiconductor device Pending JPS56105652A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP897780A JPS56105652A (en) 1980-01-28 1980-01-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP897780A JPS56105652A (en) 1980-01-28 1980-01-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56105652A true JPS56105652A (en) 1981-08-22

Family

ID=11707742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP897780A Pending JPS56105652A (en) 1980-01-28 1980-01-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56105652A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63110658A (en) * 1986-10-27 1988-05-16 Nec Kansai Ltd Manufacture of semiconductor device
US5212101A (en) * 1989-04-14 1993-05-18 Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Substitutional carbon in silicon
US5453385A (en) * 1993-08-27 1995-09-26 Goldstar Electron Co., Ltd. Method for manufacturing silicon semiconductor device with a gettering site
US5895252A (en) * 1994-05-06 1999-04-20 United Microelectronics Corporation Field oxidation by implanted oxygen (FIMOX)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939235A (en) * 1972-08-24 1974-04-12
JPS5416716A (en) * 1977-07-08 1979-02-07 Nourinshiyou Ringiyou Shikenji Upper lower communicating tubeeattached automatic drain apparatus for quantity water tank with water gauge
JPS5474682A (en) * 1977-11-28 1979-06-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor and its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939235A (en) * 1972-08-24 1974-04-12
JPS5416716A (en) * 1977-07-08 1979-02-07 Nourinshiyou Ringiyou Shikenji Upper lower communicating tubeeattached automatic drain apparatus for quantity water tank with water gauge
JPS5474682A (en) * 1977-11-28 1979-06-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor and its manufacture

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63110658A (en) * 1986-10-27 1988-05-16 Nec Kansai Ltd Manufacture of semiconductor device
US5212101A (en) * 1989-04-14 1993-05-18 Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Substitutional carbon in silicon
US5453385A (en) * 1993-08-27 1995-09-26 Goldstar Electron Co., Ltd. Method for manufacturing silicon semiconductor device with a gettering site
US5895252A (en) * 1994-05-06 1999-04-20 United Microelectronics Corporation Field oxidation by implanted oxygen (FIMOX)

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