JPS56110283A - Manufacture of embedded circuit structure-type semiconductor laser device - Google Patents

Manufacture of embedded circuit structure-type semiconductor laser device

Info

Publication number
JPS56110283A
JPS56110283A JP1217580A JP1217580A JPS56110283A JP S56110283 A JPS56110283 A JP S56110283A JP 1217580 A JP1217580 A JP 1217580A JP 1217580 A JP1217580 A JP 1217580A JP S56110283 A JPS56110283 A JP S56110283A
Authority
JP
Japan
Prior art keywords
laminated body
semiconductor
semiconductor laminated
manufacture
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1217580A
Other languages
Japanese (ja)
Inventor
Shinichi Takahashi
Hideho Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1217580A priority Critical patent/JPS56110283A/en
Publication of JPS56110283A publication Critical patent/JPS56110283A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To facilitate etching process on a high-resistance region by forming a semiconductor laminated body on a semiconductor substrate, then forming a high- resistance region and a high-resistance layer and finally a semiconductor clad layer. CONSTITUTION:A semiconductor laminated body C1 is formed on a semiconductor substrate 21. Next, in order to form a semiconductor laminated body C2 having a stripe-shaped semiconductor laminated body E on the semiconductor laminated body C1, a high-resistance region D1 is formed. Following this procedure, a high-resistance layer D2 is formed on the surface of the semiconductor laminated body C2 by etching the high-resistance region D1. Further, the stripe-shaped semiconductor laminated body E of the semiconductor laminated body C2 is embedded by means of a semiconductor layer B6. After this step, a semiconductor ohm contact layer F and metal electrode G1, G2 are formed.
JP1217580A 1980-02-04 1980-02-04 Manufacture of embedded circuit structure-type semiconductor laser device Pending JPS56110283A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1217580A JPS56110283A (en) 1980-02-04 1980-02-04 Manufacture of embedded circuit structure-type semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1217580A JPS56110283A (en) 1980-02-04 1980-02-04 Manufacture of embedded circuit structure-type semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS56110283A true JPS56110283A (en) 1981-09-01

Family

ID=11798085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1217580A Pending JPS56110283A (en) 1980-02-04 1980-02-04 Manufacture of embedded circuit structure-type semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS56110283A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58219789A (en) * 1982-06-16 1983-12-21 Hitachi Ltd Embedded optical semiconductor device
JPS60115284A (en) * 1983-11-26 1985-06-21 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser and manufacture thereof
JPS61230388A (en) * 1985-04-05 1986-10-14 Fujitsu Ltd Buried type semiconductor laser

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5496386A (en) * 1978-01-14 1979-07-30 Nippon Telegr & Teleph Corp <Ntt> Manufacture of buried optical semiconductor device
JPS54152879A (en) * 1978-05-23 1979-12-01 Sharp Corp Structure of semiconductor laser element and its manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5496386A (en) * 1978-01-14 1979-07-30 Nippon Telegr & Teleph Corp <Ntt> Manufacture of buried optical semiconductor device
JPS54152879A (en) * 1978-05-23 1979-12-01 Sharp Corp Structure of semiconductor laser element and its manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58219789A (en) * 1982-06-16 1983-12-21 Hitachi Ltd Embedded optical semiconductor device
JPS60115284A (en) * 1983-11-26 1985-06-21 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser and manufacture thereof
JPS61230388A (en) * 1985-04-05 1986-10-14 Fujitsu Ltd Buried type semiconductor laser

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